Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-02-05T23:06:36.172Z Has data issue: false hasContentIssue false
  • English
  • Français

Structure and Composition of Bismuth Nanowire Arrays

Published online by Cambridge University Press:  21 February 2011

M. S. Sander ,
Y-M. Lin ,
M. S. Dresselhaus  and
R. Gronsky
M. S. Sander
Affiliation:
Department of Chemistry, University of California, Berkeley
Y-M. Lin
Affiliation:
Department of Computer Sciences & Electrical Engineering, M.I.T
M. S. Dresselhaus
Affiliation:
Departments of Physics and Computer Sciences & Electrical Engineering, M.I.T
R. Gronsky
Affiliation:
Department of Materials Science & Engineering, University of California, Berkeley
Get access

Abstract

Arrays of nanowires have attracted considerable recent attention due to their unique electronic and optical properties. While much effort has been directed at fabricating arrays and measuring their properties, much less has been done to characterize these materials. Understanding the structure and composition of the constituents in these arrays is crucial in order to control their properties. In this work, arrays with wire diameters from 35-90nm were fabricated by pressure injecting liquid bismuth into porous alumina templates. Transmission electron microscopy (TEM) and analytical electron microscopy (AEM) were used to characterize the arrays.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 581: Symposium F – Nanophase & Nanocomposite Materials II , 1999 , 213
Copyright
Copyright © Materials Research Society 2000

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Heremans, J., Thrush, C. M., Zhang, Z., Sun, X., Dresselhaus, M. S., Ying, J. Y., and Morelli, D. T., Phys. Rev. B 58, R10091 (1998).Google Scholar
2 Zhang, Z., Ying, J. Y., and Dresselhaus, M. S., J. Mater. Res. 13, 1745 (1998).Google Scholar
3 Sun, X., Zhang, Z., and Dresselhaus, M. S., App. Phys. Lett. 74, 4005 (1999).Google Scholar
4 Partin, D. L., Heremans, J., Morelli, D. T., Thrush, C.M., Olk, C. H., and Perry, T. A., Phys. Rev. B 38, 3818 (1988).Google Scholar
5 Nahm, S., Salamanca-Riba, L., Partin, D. L., Heremans, J., J.Mat. Res. 5, 784 (1990).Google Scholar
6 Zhang, Z. B., Gekhtman, D., Dresselhaus, M. S., Ying, J. Y., Chem. Mat. 11,1659 (1999).Google Scholar
7 Sotiropoulou, D., J.Mater. Sci. Lett. 16, 693 (1997).Google Scholar