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Structural Effects in Al(111)/Si(111) Heteroepitaxy by Partially Ionized Beam Deposition α

Published online by Cambridge University Press:  28 February 2011

A. S. Yapsir ,
C.-H. Choi ,
S. N. Yang ,
T.-M. Lu ,
M. Madden  and
B. Tracy
A. S. Yapsir
Affiliation:
Center for Integrated Electronics and Physics Department, Renselaer Polytechnic, Institute, Troy, NY 12180.
C.-H. Choi
Affiliation:
Center for Integrated Electronics and Physics Department, Renselaer Polytechnic, Institute, Troy, NY 12180.
S. N. Yang
Affiliation:
Center for Integrated Electronics and Physics Department, Renselaer Polytechnic, Institute, Troy, NY 12180.
T.-M. Lu
Affiliation:
Center for Integrated Electronics and Physics Department, Renselaer Polytechnic, Institute, Troy, NY 12180.
M. Madden
Affiliation:
Intel Corporation, Santa Clara, CA 95051
B. Tracy
Affiliation:
Intel Corporation, Santa Clara, CA 95051
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Abstract

Single crystal Al(111) films were grown on Si(111) surface at room temperature under a conventional vacuum condition using the partially ionized beam (PIB) deposition technique. The Al films were deposited with an ion to atom ratio of about 0.3% and an acceleration voltage of 1 kV. Transmission electron microscopy (TEM) analysis showed that the as-deposited films were single crystal with certain density of dislocation networks. These dislocations disappeared following a heat treatment at 450°C for 30 min. From X-ray diffraction and TEM patterns, it was observed that the Al(111) was aligned to the substrate with Al<1l0>//Si<1l0>. Possible mechanisms of the PIB epitaxial growth and a novel structural defect that is unique to this large lattice mismatch system are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , pp. 465 - 470
Copyright
Copyright © Materials Research Society 1988

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