Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T18:43:48.663Z Has data issue: false hasContentIssue false
  • English
  • Français

Structural Characterization of P-I-N Diode Superlattice Structures Grown on <100>, <110>, and <111> Orientation Si Substrates

Published online by Cambridge University Press:  22 February 2011

P. M. Adams ,
R. C. Bowman Jr ,
V. Arbet-Engols ,
K. L. Wang  and
C. C. Ahn
P. M. Adams
Affiliation:
The Aerospace Corp., P. O. Box 92 957, Los Angeles, CA 90009
R. C. Bowman Jr
Affiliation:
The Aerospace Corp., P. O. Box 92 957, Los Angeles, CA 90009
V. Arbet-Engols
Affiliation:
University of California, Los Angeles, CA 90024
K. L. Wang
Affiliation:
University of California, Los Angeles, CA 90024
C. C. Ahn
Affiliation:
California Institute of Technology, Pasadena, CA 91125
Get access

Abstract

P-I-N diodes whose intrinsic region consists of strained layer superlattices (SLS), separated by 40 nm Si spacers, have been grown by MBE on Si substrates with <100>, <110>, and <111> orientations. These structures have been characterized by x-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM). The dual periodicities in these structures produced unique XRD effects and the quality was highly dependent on substrate orientation. The <100> sample was in general free of defects, whereas the <110> and <111> specimens contained significant numbers of twins and dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 147
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Arbet-Engels, V., Karunasiri, R., and Wang, K., SPIE Symp. Proc, 1283, 28 (1990).Google Scholar
2. McWhan, D., in Synthetic Modulated Structures, edited by Chang, L. and Giessen, B., (Academic Press, New York, 1985) pp.43–74.Google Scholar
3. Speriosu, V. S. and Vreeland, T. Jr, J. Appl. Phys., 56, 1591 (1984).Google Scholar
4. Speriosu, V. S., J. Appl. Phys., 52, 6094 (1981).Google Scholar
5. Kuan, T., Iyer, S., and Yeo, E., 47th EMSA Proc., 580 (1989).Google Scholar