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Stressmigration Behavior of Multilevel Ulsi Alcu-Metallizations

Published online by Cambridge University Press:  17 March 2011

A.H. Fischer ,
A.E. Zitzelsberger ,
M. Hommel  and
A. von Glasow
A.H. Fischer
Affiliation:
Infineon Technologies AG, Reliability Methodology, Munich, Germany
A.E. Zitzelsberger
Affiliation:
Infineon Technologies AG, Reliability Methodology, Munich, Germany
M. Hommel
Affiliation:
Infineon Technologies AG, Reliability Methodology, Munich, Germany
A. von Glasow
Affiliation:
Infineon Technologies AG, Reliability Methodology, Munich, Germany
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Abstract

With decreasing geometries of metal interconnects the demands on metallization reliability increase rapidly. In addition to electromigration, stress-induced voiding becomes a major problem, influencing lifetime and functionality of integrated circuits. This paper summarizes our studies on stressmigration behavior of various AlCu-multilevel metallizations. A model for an estimation of the median time to failure is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D2.6.1
Copyright
Copyright © Materials Research Society 2000

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