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Strain-Free GexSi1−x Layers with Low Threading Dislocation Densities Grown on Si Substrates

Published online by Cambridge University Press:  22 February 2011

E. A. Fitzgerald ,
Y. H. Xie ,
M. L. Green ,
D. Brasen ,
A. R. Kortan ,
Y. J. Mii ,
J. Michel ,
B. E. Weir ,
L. C. Feldman  and
J. M. Kuo
E. A. Fitzgerald
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Y. H. Xie
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
M. L. Green
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
D. Brasen
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
A. R. Kortan
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
Y. J. Mii
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
J. Michel
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
B. E. Weir
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
L. C. Feldman
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
J. M. Kuo
Affiliation:
AT&T Bell Laboratories, 600 Mountain Ave., Murray Hill, NJ 07974
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Abstract

We have grown linearly compositionally graded GexSi1−x structures at high temperatures (700–900°C) on Si substrates to form a surface which resembles a GexSi1−x substrate. We have obtained completely relaxed structures with x≤0.50 and threading dislocation densities in the 105cm−2 - 106cm−2 range. Because of the very low threading dislocation densities, the structures appear dislocation free in conventional transmission electron microscopy (TEM) cross-section and plan view. Employing the electron beam induced current technique (EBIC), we were able to consistently measure these low threading dislocation densities. A direct comparison of two x=0.35 films, one graded in Ge content and one uniform in Ge content, shows that compositional grading decreases the dislocation density by a factor of 100–1000. These. higher quality graded buffers have been used as templates for the subsequent growth of InGaP light emitting diodes (LED) and GexSi1−x/Si two-dimensional electron gas (2DEG) structures. Room temperature operation of orange-red LEDs were obtained at current densities of =600A/cm, and mobilities as high as 96,000 cm2/V-s were achieved at 4.2K in the 2DEG structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 211
Copyright
Copyright © Materials Research Society 1991

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References

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