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Strain Relaxation During Heteroepitaxy on Twist-Bonded Thin Gallium Arsenide Substrates

Published online by Cambridge University Press:  10 February 2011

P. Kopperschmidt ,
S T. Senz ,
R. Scholz ,
G. Kästner ,
U. Gösele ,
P. Velling ,
W. Prost ,
F.-J. Tegude ,
V. Gottschalch  and
K. Wada
P. Kopperschmidt
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany, [email protected], [email protected]
S T. Senz
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany, [email protected], [email protected]
R. Scholz
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany, [email protected], [email protected]
G. Kästner
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany, [email protected], [email protected]
U. Gösele
Affiliation:
Max-Planck-Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany, [email protected], [email protected]
P. Velling
Affiliation:
Gerhard-Mercator-Universität, Solid-State Electron. Dept., Lotharstraße 55, D-47057 Duisburg, Germany
W. Prost
Affiliation:
Gerhard-Mercator-Universität, Solid-State Electron. Dept., Lotharstraße 55, D-47057 Duisburg, Germany
F.-J. Tegude
Affiliation:
Gerhard-Mercator-Universität, Solid-State Electron. Dept., Lotharstraße 55, D-47057 Duisburg, Germany
V. Gottschalch
Affiliation:
Universität Leipzig, Fakultät für Chemie und Mineralogie, D-04103 Leipzig, Germany
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Abstract

We realized “compliant” substrates in the square centimeter range by twist-wafer bonding of an (100) GaAs handle wafer to another (100) GaAs wafer with a several nm thick epitaxially grown GaAs layer followed by an appropriate back-etch procedure. The twist angle between the two GaAs wafers was chosen between 4 and 15 degrees. The twisted layers were characterized by area scanned X-ray diffraction, optical and electron microscopy and atomic force microscopy. Occasionally we observed regions showing pinholes in the transferred thin twistbonded GaAs layer.

After epitaxial deposition of 300 nm InP and InGaAs films with different degrees of mismatch on these substrates, transmission electron microscopy revealed grains which are epitaxially oriented to either the substrate or the twist-bonded layer. The grain boundaries between the twisted and untwisted grains probably collect threading dislocations, thus reducing their density in the areas free of boundaries.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 535: Symposium D/I – III-V and IV-IV Materials & Processing Challenges for Highly… , 1998 , 45
Copyright
Copyright © Materials Research Society 1999

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