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Strain Measurements from Single Grains in Passivated Aluminum Conductor Lines by X-Ray Microdiffraction During Electromigration

Published online by Cambridge University Press:  17 March 2011

K. J. Hwang
Affiliation:
Materials Research Center, Lehigh University, Bethlehem, PA 18015, [email protected]
G. S. Cargill III
Affiliation:
Materials Research Center, Lehigh University, Bethlehem, PA 18015
T. Marieb
Affiliation:
Components Research, Intel Corp., Hillsboro, OR 97124
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Abstract

We describe a method for determining the local strain state of passivated aluminum metal lines from single grains within 2.6 µm × 7.0 µm × 0.75 µm sized regions along the line. X-ray microbeam diffraction is used to obtain localized measurements of thermal and electromigration-induced strain during 37 hours of electromigration in a passivated 2.6 µm-wide, 300 µm-long pure Al conductor line at a current density of 4.2×105 A/cm2 and temperature of 270°C. Diffraction from single grains is used to measure both the in-plane and normal components of strain and their evolution during electromigration at several positions along the line.

Type
Research Article
Copyright
Copyright © Materials Research Society 2000

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References

[1] Hinode, K., Asano, I., and Homma, Y., IEEE Trans. Elect. Dev. 36, 10501055 (1989).10.1109/16.24347Google Scholar
[2] Yue, J. T., Funsten, W. P., and Taylor, R. V., IEEE Int. Reliability Phys. Symp. Proc. (IEEE, New York, 1985), pp. 18.Google Scholar
[3] Yeo, I.-S., S. Anderson, G. H., Ho, P. S., and Hu, C. K., J. Appl. Phys. 78, 953961(1995).10.1063/1.360289Google Scholar
[4] Greenbaum, B., Sauter, A. I., Flinn, P. A., and Nix, W. D., Appl. Phys. Lett. 58, 18451847 (1991).10.1063/1.105075Google Scholar
[5] Korhonen, M. A., Black, R. D., and Li, C-Y., J. Appl. Phys. 69, 1748 (1991).10.1063/1.347222Google Scholar
[6] Besser, P. R., Brennan, S., and Bravman, J. C., J. Mater. Res. 9, 1324 (1994).10.1557/JMR.1994.0013Google Scholar
[7] Flinn, P. A., and Chiang, C., J. Appl. Phys. 67, 29272931 (1990).10.1063/1.345411Google Scholar
[8] Tezaki, A., Mineta, T., Egawa, H., and Noguchi, T., IEEE Int. Reliability Phys. Symp. Proc. (IEEE, New York, 1990), pp. 221229.Google Scholar
[9] Flinn, P. A., MRS Soc. Symp. Proc. 188, 3 (1990).10.1557/PROC-188-3Google Scholar
[10] Marcus, M.A., Flood, W. F., Cirelli, R. A., Kistler, R. C., Ciampa, N. A., Mansfield, W.M., Barr, D. L., Volkert, C. A., and Steiner, K. G., MRS Soc. Symp. Proc. 338, 203 (1994).10.1557/PROC-338-203Google Scholar
[11] Wang, P.-C., Cargill, G. S. III, Noyan, I. C., Liniger, E. G., Hu, C.-K., and Lee, K. Y., MRS Symp. Proc. 427, 35 (1996).10.1557/PROC-427-35Google Scholar
[12] Wang, P.-C., Cargill, G. S. III, Noyan, I. C., Liniger, E. G., Hu, C.-K., and Lee, K. Y., MRS Symp. Proc. 473, 273 (1997).10.1557/PROC-473-273Google Scholar
[13] Wang, P.-C., Cargill, G. S. III, Noyan, I. C., and Hu, C.-K., Appl. Phys. Lett. 72, 1296 (1998).10.1063/1.120604Google Scholar
[14] Chung, J.-S., Tamura, N., Ice, G. E., Larson, B. C., and Budai, J. D., MRS Soc. Symp. Proc. 563, 169 (1999).10.1557/PROC-563-169Google Scholar
[15] Gerlich, D., and Fisher, E. S., J. Phys. Chem. Solids 30, 11971205 (1969).10.1016/0022-3697(69)90377-1Google Scholar
[16] Dolle, H., and Hauk, V., Z. Metallk. 69, 410 (1978).Google Scholar