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Stability Improvement of Nickel Silicide with Co Interlayer on Si, Polysilicon and SiGe

Published online by Cambridge University Press:  21 March 2011

Jer-shen Maa ,
Douglas J. Tweet ,
Yoshi Ono ,
Lisa Stecker  and
Sheng Teng Hsu
Jer-shen Maa
Affiliation:
Sharp Laboratories of America, 5700 NW Pacific Rim Blvd. Camas, WA 98607
Douglas J. Tweet
Affiliation:
Sharp Laboratories of America, 5700 NW Pacific Rim Blvd. Camas, WA 98607
Yoshi Ono
Affiliation:
Sharp Laboratories of America, 5700 NW Pacific Rim Blvd. Camas, WA 98607
Lisa Stecker
Affiliation:
Sharp Laboratories of America, 5700 NW Pacific Rim Blvd. Camas, WA 98607
Sheng Teng Hsu
Affiliation:
Sharp Laboratories of America, 5700 NW Pacific Rim Blvd. Camas, WA 98607
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Abstract

Thermal stability of nickel silicide is improved by adding a thin Co interlayer at Ni/Si interface. After high temperature anneal, the low sheet resistance of silicide and the low junction leakage of the ultra-shallow junction show the lack of film degradation. The transformation to disilicide phase occurred at a lower temperature. At 850°C, interface shows the truncated facet structure extended 100° to 200° below silicide/Si interface. With Co addition, nickel silicide formed on polysilicon and on SiGe films also show improved thermal stability and low sheet resistance. Formation temperature of disilicide phase occurred at lower temperature in all these cases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K6.9
Copyright
Copyright © Materials Research Society 2001

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References

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