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Spectroscopic Ellipsometry Studies of Tb-doped SiO2 Thin Films

Published online by Cambridge University Press:  01 February 2011

Zhe Chuan Feng ,
Zhe Chuan Feng ,
Yia Chung Chang  and
Ting Kai Li
Zhe Chuan Feng
Affiliation:
[email protected], National Taiwan University, Graduate Institute of Electro-Optical Engineering & Department of Electrical Engineering, National Taiwan University, Taipei, 106-17 Taiwan, ROC., Taipei, 106-17, Taiwan, 886-2-3366-3543, 886-2-2367-7467
Zhe Chuan Feng
Affiliation:
[email protected], National Taiwan University, Graduate Institute of Electro-Optical Engine ering & Department of Electrical Engineering, Taipei, 106-17, Taiwan
Yia Chung Chang
Affiliation:
[email protected], Academia Sinica, Research Center for Applied Sciences, 128 Section 2, Academia Road Nankang, Taipei, 115, Taiwan
Ting Kai Li
Affiliation:
[email protected], Sharp Labs of America, Inc., 5700 Pacific Rim Blvd, Camas, WA, 98607, United States
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Abstract

The optical properties of Tb-doped SiO2 films have been studied from multi-wavelength spectroscopic ellipsometry (SE) measurements performed over the 250–1100 nm wavelength range. The SE modeling carried out with care to adhere as much to the ellipsometric fitting qualities. The refractive index dispersions, the layer thickness, and the lateral thickness variation of the films are given and discussed regarding the optical constitution of these films and the ellipsometric validity of these parameters

Keywords

Tbsputteringoptical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I07-14
Copyright
Copyright © Materials Research Society 2007

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