Published online by Cambridge University Press: 22 February 2011
Two complementary speckle techniques for the measurement of temperature from the rough back surface of Si wafers during rapid thermal processing are demonstrated. Electronic speckle pattern interferometry is a full field intensity cross-correlation technique that provides a two-dimensional map of the surface temperature. Measurements are presented that demonstrate a resolution of ∼ ±2°C. A new speckle technique, sub-feature speckle interferometry is introduced. This technique provides a much more rapid and precise averaged temperature measurement by monitoring the strain between two points with interferometric precision usually associated with moird interferometry or holography rather than speckle. Preliminary measurements are presented that demonstrate the capability of the technique.