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Solution Processable Nanowire Field-Effect Transistors

Published online by Cambridge University Press:  22 September 2011

Charles Opoku ,
Lichun Chen ,
Frank Meyer  and
Maxim Shkunov
Charles Opoku
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, GU2 7HX, UK
Lichun Chen
Affiliation:
Merck Chemicals, Chilworth Technical Centre, Southampton, SO16 7QD, UK
Frank Meyer
Affiliation:
Merck Chemicals, Chilworth Technical Centre, Southampton, SO16 7QD, UK
Maxim Shkunov
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, GU2 7HX, UK
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Abstract

Hybrid field-effect-transistors (FETs) with germanium nanowire (NW) arrays and organic gate dielectric are presented. The nanowire deposition steps are fully compatible with printed electronics route. NW FETs demonstrate good performance with On/Off ratios of ~103 and hole mobilities of ~13 cm2/Vs in both nitrogen and air atmosphere. These results suggest that the hybrid nanowire FETs could be used in large area inexpensive electronics.

Keywords

Georganicdielectric
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1287: Symposium F – Low-Temperature-Processed Thin-Film Transistors , 2011 , mrsf10-1287-f10-03
Copyright
Copyright © Materials Research Society 2011

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References

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