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Solution Grown Polysilicon for Flat Panel Displays

Published online by Cambridge University Press:  10 February 2011

R. L. Wallace  and
W. A. Anderson
R. L. Wallace
Affiliation:
State University of New York at Buffalo, Center For Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, 217C Bonner Hall, Amherst, NY 14260
W. A. Anderson
Affiliation:
State University of New York at Buffalo, Center For Electronic and Electro-optic Materials, Department of Electrical and Computer Engineering, 217C Bonner Hall, Amherst, NY 14260
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Abstract

Thin-film poly-Si on low-cost substrates is useful for thin-film transistors in flat panel displays or for photovoltaics. The films reported herein were formed at 600°C by d.c. magnetron sputtering from a Si-target onto a SiO2/Mo substrate, pre-coated with Sn or In/Ti to give a liquid phase growth. Poly-Si films have given a preferred (111) orientation, grain size up to 20μm, a carrier mobility exceeding 100cm2/Vs and carrier lifetime of 8μs when using the Sn pre-layer. The Sn pre-layer typically gave smaller grain size than did the In/Ti solvent but the latter gave lower carrier lifetime from Ti incorporation in the film. The film from the Sn pre-layer gave carrier mobility of 140cm2/V-s after hydrogenation by microwave electron cyclotron resonance. Properties of the Si thin-film can be controlled by type of pre-layer, doping of the target, substrate temperature and deposition environment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 219
Copyright
Copyright © Materials Research Society 1997

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