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Sol-Gel Derived Silica Layers for Low-k Dielectrics Applications

Published online by Cambridge University Press:  17 March 2011

Sylvie Acosta ,
André Ayral ,
Christian Guizard ,
Charles Lecornec ,
Gérard Passemard  and
Mehdi Moussavi
Sylvie Acosta
Affiliation:
LMPM, UMR CNRS 5635, ENSCM, 8, rue de l'Ecole Normale, F34296 Montpellier cedex 5, France
André Ayral
Affiliation:
LMPM, UMR CNRS 5635, ENSCM, 8, rue de l'Ecole Normale, F34296 Montpellier cedex 5, France
Christian Guizard
Affiliation:
LMPM, UMR CNRS 5635, ENSCM, 8, rue de l'Ecole Normale, F34296 Montpellier cedex 5, France
Charles Lecornec
Affiliation:
LETI/DMEL/TCI, CEA-Grenoble, 17, rue des Martyrs, F38054 Grenoble cedex 9, France
Gérard Passemard
Affiliation:
ST Microelectronics, Central R&D, CEA-Grenoble, 17, rue des Martyrs, F38054 Grenoble cedex 9, France
Mehdi Moussavi
Affiliation:
LETI/DMEL/TCI, CEA-Grenoble, 17, rue des Martyrs, F38054 Grenoble cedex 9, France
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Abstract

Porous silica exhibits attractive dielectric properties, which make it a potential candidate for use as insulator into interconnect structures. A new way of preparation of highly porous silica layers by the sol-gel route was investigated and is presented. The synthesis strategy was based on the use of common and low toxicity reagents and on the development of a simple process without gaseous ammonia post-treatment or supercritical drying step. Defect free layers were deposited by spin coating on 200 mm silicon wafers and characterized. Thin layers with a total porosity larger than 70% and an average pore size of 5 nm were produced. The dielectric constant measured under nitrogen flow on these highly porous layers is equal to ∼ 2.5, which can be compared to the value calculated from the measured porosity, ∼ 1.9. This difference is explained by the presence of water adsorbed on the hydrophilic surface of the unmodified silica.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 612: Symposium D – Materials, Technology & Reliability for Advanced Interconnects.. , 2000 , D5.26.1
Copyright
Copyright © Materials Research Society 2000

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