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Simulation of Nanoscale Polishing of Copper with Molecular Dynamics

Published online by Cambridge University Press:  01 February 2011

Y. Ye ,
R. Biswas ,
J. R. Morris ,
A. Bastawros  and
A. Chandra
Y. Ye
Affiliation:
Department of Physics and Astronomy and Microelectronics Research Center Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011
R. Biswas
Affiliation:
Department of Physics and Astronomy and Microelectronics Research Center Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011
J. R. Morris
Affiliation:
Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011
A. Bastawros
Affiliation:
Dept. of Aerospace Engineering and Engineering Mechanics, Iowa State University, Ames, IA 50011.
A. Chandra
Affiliation:
Dept. of Mechanical Engineering, Iowa State University, Ames, IA 50011.
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Abstract

We investigate the fundamental atomistic processes in chemical mechanical polishing of copper, by simulating the nanoscale polishing of a copper surface by a single abrasive particle. The atomistic mechanisms of an individual surface-polishing event are simulated with molecular dynamics using the embedded atom method. The nature of material removal, chip formation, material defects and frictional forces were investigated as a function of the cutting speed, depth of cut, and abrasive geometry. Nanometric cutting comprises of two steps: material removal as the tool machines the top surface, followed by relaxation of the work material to a low defect configuration, after the tool or abrasive particle has passed over the machined region. Chemical etching processes during planarization considerably improve the quality of the planarized surface and reduce defects in the bulk.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 732: Symposium I – Chemical-Mechanical Planarization , 2002 , I4.8
Copyright
Copyright © Materials Research Society 2002

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