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Simulation of Grazing-Incidence Synchrotron X-ray Topographic Images of Threading c+a Dislocations in 4H-SiC

Published online by Cambridge University Press:  28 May 2012

Fangzhen Wu ,
Shayan Byrappa ,
Huanhuan Wang ,
Yi Chen ,
Balaji Raghothamachar ,
Michael Dudley ,
Edward K. Sanchez ,
Gil Chung ,
Darren Hansen  and
Stephan G. Mueller
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Fangzhen Wu
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Shayan Byrappa
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Huanhuan Wang
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Yi Chen
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Balaji Raghothamachar
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Michael Dudley*
Affiliation:
Department of Materials Science and Engineering, Stony Brook University, Stony Brook, New York, 11794, USA
Edward K. Sanchez*
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
Gil Chung
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
Darren Hansen
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
Stephan G. Mueller
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
Mark J. Loboda
Affiliation:
Dow Corning Compound Semiconductor Solutions, Midland, Michigan, 48686, USA
*
a[email protected]
b[email protected]
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Abstract

Synchrotron X-ray topography (SXRT) of various geometries has been successfully utilized to image c+a dislocations in 4H-SiC crystals. Although molten potassium hydroxide(KOH) can be used to reveal the location of such dislocations, it is not possible to determine their senses or their Burgers vector magnitude. A simple, non-destructive method has been proposed to determine the Burgers vector of these c+a dislocations called the ray tracing simulation, which has been successfully implemented previously in revealing the dislocation sense and magnitude of micropipes, closed-core threading screw dislocations (TSDs) and threading edge dislocations (TEDs) in 4H-SiC. In this paper, grazing incidence topography is performed using the monochromatic beam for the horizontally cut wafers to record pyramidal reflections of 11-28 type. Ray tracing simulation has been successfully implemented to correlate the simulated images with experimental images which are discussed in the paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h02-04
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

[1] Wu, F., et al. ., ICSCRM 2011 (in press)Google Scholar
[2] Dudley, M., et al. ., Appl. Phys. Lett., vol. 98, 232110 (2011).Google Scholar
[3] Dudley, M., et al. ., Mater. Sci. Forum, vols. 679–680, pp. 269–272, (2011).Google Scholar
[4] Dudley, M., et al. ., Mater. Res. Soc. Symp. Proc., vol. 1246, 1246-B02-02 (2010).Google Scholar
[5] Chen, Y., et al. ., J. Electron. Mater., vol. 37, pp. 713–720 (2008)Google Scholar
[6] Kamat, I., et al. ., Mater. Sci. Forum, vols. 600–603, pp. 305–308, (2009).Google Scholar
[7] Huang, X. R., et al. ., Appl. Phys. Lett., vol. 91, 231903 (2007).Google Scholar
[8] Dudley, M., et al. ., J. Phys. D: Appl. Phys. 32 A139–A144 (1999).Google Scholar
[9] Huang, X. R., et al. ., J. Appl. Cryst., 32, 516–524 (1999).Google Scholar
[10] Bowen, D. K. and Tanner, B. K., in “High Resolution X-Ray Diffractometry and Topography”, Taylor & Francis, pp. 189 (1998).Google Scholar
[11] Hirth, J. P. and Lothe, J., in “Theory of Dislocations”, 2nd Ed., John Wiley & Sons Publication (1982)Google Scholar
[12] Eshelby, J. D. and Stroh, A. N., Phil. Mag. 42, 1401 (1951)Google Scholar