Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T15:34:30.381Z Has data issue: false hasContentIssue false
  • English
  • Français

Silsesquioxane-based Photopatternable Porous Low-k Dielectric Materials

Published online by Cambridge University Press:  01 February 2011

Alshakim Nelson ,
Jitendra S Rathore ,
Blake Davis ,
Phillip Brock ,
Ratnam Sooriyakumaran ,
Robert Miller  and
Qinghuang Lin
Alshakim Nelson
Affiliation:
[email protected], IBM Almaden Research center, San Jose, California, United States
Jitendra S Rathore
Affiliation:
[email protected], IBM Almaden Research center, San Jose, California, United States
Blake Davis
Affiliation:
[email protected], IBM Almaden Research center, San Jose, California, United States
Phillip Brock
Affiliation:
[email protected], IBM Almaden Research center, San Jose, California, United States
Ratnam Sooriyakumaran
Affiliation:
[email protected], IBM Almaden Research Center, San Jose, United States
Robert Miller
Affiliation:
[email protected], IBM Watson Research Center, Yorktown heights, New York, United States
Qinghuang Lin
Affiliation:
[email protected], IBM Almaden Research Center, San Jose, United States
Get access

Abstract

The future resolution requirements for the semiconductor industry demand advanced lithographic techniques, such as immersion and extreme ultraviolet (EUV) technologies, which will increase the cost of microelectronics manufacturing. Currently, low-k dielectric materials, which are used as insulating layers between the copper wiring, are indirectly patterned using a set of sacrificial layers and etch processes. The sacrificial layers include a photoresist polymer that must first be imaged prior to transferring the pattern to the underlying layers, including the dielectric layer. In order to reduce the number of processing steps required for semiconductor manufacturing, we have developed a novel photo-patternable low-k dielectric material that (1) eliminates the need for sacrificial layers and (2) reduces the number of wafer processing steps. Silsesquioxane copolymers that undergo acid-catalyzed crosslinking when exposed to 193nm wavelength were synthesized. In addition to the direct photo-patternability, the patterned structures are suitable as a dielectric material with a dielectric constant as low as 2.4, and an appreciable elastic modulus (E > 4.0 GPa). These photo-patternable low-k materials represent a ‘greener' approach to semiconductor manufacturing which has the ability to reduce cost, waste materials, and energy consumption.

Keywords

dielectricdielectric propertiesporosity
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1249: Symposia E/F – Advanced Interconnects and Chemical Mechanical Planarization for Micro-and Nanoelectronics , 2010 , 1249-F06-02
Copyright
Copyright © Materials Research Society 2010

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Pease, F. and Chou, S. Y. Proceedings of the IEEE 96, 248–270 (2008).Google Scholar
2 Hoofman, R.J.O.M. Nguyen, V. H. Arnal, V. Broekaart, M. Gosset, L. G, Besling, W. F. A. Fayolle, M. and Iacopi, F. in Dielectric Films for Advanced Microelectronics, Ed. Baklanov, M. Maex, K. and Green, M. (Wiley, New York, 2007) pp. 199–240.Google Scholar
3 Hellmut, A. Roland, R. and Recai, S. Applied Surface Science 106, 311–315, (1996).Google Scholar
4 Hellmut, A. Rainer, L. and Roland, R, Polymers for Advanced Technologies 4(4), 217–233 (1993).Google Scholar
5 Griffith, S. Mondol, M. Kong, D. S. and Jacobson, J. M. Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures 20(6), 2768–2772 (2002).Google Scholar
6 Yang, I. Y. Silverman, S. Ferrera, J. Jackson, K. Carter, J. M. Antoniadis, D. A. and Smith, H. I., Journal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures 13(6), 2741–2744 (1995).Google Scholar
7 Jen, W -L. Palmieri, F. Chao, B. Lin, M. Hao, J. Owens, J. Sotoodeh, K. Cheung, R. and Willson, C.G., Proceedings of SPIE-The International Society for Optical Engineering 6517 (2007).Google Scholar
8 Stewart, M. D. Wetzel, J. T. Schmid, G. M. Palmieri, F. Thompson, E. Kim, E. K. Wang, D. Sotodeh, K. Jen, K. and Johnson, S. C. Proceedings of SPIE-The International Society for Optical Engineering 5751, (2005).Google Scholar
9 Palmieri, F. Stewart, M. Jen, K. Wilson, C. G. and Schmid, G. Solid State Technology 50(9), 42–45 (2007).Google Scholar
10 Allen, R. D. Brock, P. J. Davis, B. G. Dubois, J-M. Lin, Q. Miller, R. D. Nelson, A. Purushothaman, S. and Sooriyakumaran, R. “Photopatternable Dielectric Materials for BEOL Applications and Methods of Use” US 2009/0291389 A1.Google Scholar
11 Dubois, G. Volksen, W. Magbitang, T. Miller, R. D. Gage, D. M. and Dauskardt, R. H. Adv. Mater. 19, 3989 (2007).Google Scholar
12 Ezbiansky, K. A. Arkles, B. Composto, R. J. and Berry, D. Mat. Res. Soc. Symp. Proc. 606, 251 (2000).Google Scholar