Hostname: page-component-cd9895bd7-q99xh Total loading time: 0 Render date: 2024-12-27T02:02:03.820Z Has data issue: false hasContentIssue false
  • English
  • Français

Siloxane Polymers as Low Dielectric Materials for Microelectronics

Published online by Cambridge University Press:  21 February 2011

C. P. Wong
C. P. Wong*
Affiliation:
AT&T Bell Laboratories, P. O. Box 900, Princeton, NJ 08542-0900
Get access

Abstract

A modem VLSI device is a complicated three-dimensional structure that consists of multilayer metallization conductor lines which are separated with interlayer-dielectrics as insulation. This VLSI technology drives the IC device into sub-micron feature size that operates at ultra-fast speed (in excess of > 100 MHz). Passivation and interlayer dielectric materials are critical to the device performance due to the conductor signal propagation delay of the high dielectric constant of the material. Low dielectric constant materials are the preferred choice of materials for this reasons. These materials, such as Teflon® and siloxanes (silicones), are desirable because of their low dielectric constant (∈1) = 2.0, 2.7, respectively. This paper describes the use of a low dielectric constant siloxane polymer (silicone) as IC devices passivation layer material, its chemistry, material processes and reliability testing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 390: Symposium S – Electronic Packaging Materials Science VIII , 1995 , 89
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Wong, C. P., in Wong., C. P., ed., Polymers for Electric and Photonic Applications, Academic Press, San Diego, Calif., 1993, Chapt. 4, pp. 167–214.Google Scholar
2. Tummala, R. R. and Tymaszewski, E. J., Eds., Microelectronic Packaging Handbook, Van Nostrand Reinhold Co., Inc., New York, 1989.Google Scholar
3. Wong, C. P., in Lai, J. H., ed., Polymers in Electronics, CRC Press, Boca Raton, Fla., 1989, Chapt. 3, pp. 63–92.Google Scholar
4. Wong, C. P., Application of Polymers in Encapsulation of Electronic Parts, Advances of Polymer Science, Vol.84, Springer-Verlag, Berlin, 1988, pp. 63–83.Google Scholar
5. Seraphim, D., Ladky, R. and Li, C-y., Principles of Electronic Packaging, McGraw Hill Book Co., Inc., New York, 1989.Google Scholar
6. Otsuka, K. and co-workers, IEEE Trans. Comp. Hybrids and Manuf. Technol., CHMT–12 (1987).Google Scholar
7. Wong, C. P., “Silicone Resin Electronic Device Encapsulant”, U.S. Patent 5,085,913 (Feb. 4, 1992), U.S. Patent 5,215,801 (June 1, 1993) and U.S. Patent 5,275,841 (Jan. 4, 1994).Google Scholar