Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T18:46:38.378Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon-Based Long Wavelength Infrared Detectors Fabricated by Molecular Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

T. L. Lin ,
E. W. Jones ,
T. George ,
A. Ksendzov  and
M. L. Huberman
T. L. Lin
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
E. W. Jones
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
T. George
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
A. Ksendzov
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
M. L. Huberman
Affiliation:
Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, CA 91109
Get access

Abstract

SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by molecular beam epitaxial (MBE) growth of p+ SiGe layers on p-type Si substrates. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p+ SiGe layers were grown by MBE using either HBO2 or elemental boron as the dopant source. Improved crystalline quality and lower growth temperatures were achieved for boron-doped SiGe layers as compared with the HBO2-doped layers. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited and was drastically reduced as compared with that of HBO2-doped HIP detectors. The heterojunction barrier was determined to be 0.066 eV from activation energy analysis of the HIP detectors, corresponding to a 18 μm cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 μm has been characterized with corresponding quantum efficiencies of 5 – 0.1%.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 477
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Lin, T. L. and Maserjian, J., Appl. Phys. Lett., 52, 1423 (1990).Google Scholar
2. Lin, T. L., Jones, E. W., Ksendzov, A., Dejewski, S. M., Fathauer, R. W., Krabach, T. N., and Maserjian, J. in Technical Digest of International Electron Devices Meeting, 1990, pp. 641–644 Google Scholar
3. Pankove, J. I., Optical Processes in Semiconductors, (Dover Publishers. New York, 1975), p. 67.Google Scholar
4. Lin, T. L., Fathauer, R. W., and Grunthaner, P. J., Appl. Phys. Lett., 55, 795 (1989).Google Scholar
5. Tatsumi, Toru, Thin Solid Films, 184, 1 (1990).Google Scholar
6. Grunthaner, P. J., Grunthaner, F. J., Fathauer, R. W., Lin, T. L., Hecht, M. H., Bell, L. D., Kaiser, W. J., Schowengerdt, F. D., and Mazur, J. H., Thin Solid Films, 183, 197 (1989).Google Scholar
7. Huberman, M. L., Ksendzov, A., Lin, T. L., Terhune, R., and Maserjian, J., unpublished.Google Scholar
8. Kane, E. O., J. Phys. Chem. Solid, 1, 82 (1956).Google Scholar