Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-07-05T00:13:57.437Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Surface Chemistry By IR Spectroscopy in the Mid- To Far-IR Region: H2O And Ethanol On Si(100)

Published online by Cambridge University Press:  15 February 2011

L. M. Struck ,
J. Eng Jr. ,
B. E. Bent ,
Y. J. Chabal ,
G. P. Williams ,
A. E. White ,
S. Christman ,
E. E. Chaban ,
K. Raghavachari  and
G. W. Flynn
...Show all authors
L. M. Struck
Affiliation:
Columbia University, Department of Chemistry, New York, NY AT&T Bell Laboratories, Murray Hill, NJ new address: National Institute of Standards and Technology, Gaithersburg, MD
J. Eng Jr.
Affiliation:
Columbia University, Department of Chemistry, New York, NY
B. E. Bent
Affiliation:
Columbia University, Department of Chemistry, New York, NY
Y. J. Chabal
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
G. P. Williams
Affiliation:
Brookhaven National Laboratory, Upton, NY
A. E. White
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
S. Christman
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
E. E. Chaban
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
K. Raghavachari
Affiliation:
AT&T Bell Laboratories, Murray Hill, NJ
G. W. Flynn
Affiliation:
Columbia University, Department of Chemistry, New York, NY
K. Radermacher
Affiliation:
Institut für Schicht-und Ionentechnik, Forschungszentrum Jülich, Jülich, Germany.
S. Mantl
Affiliation:
Institut für Schicht-und Ionentechnik, Forschungszentrum Jülich, Jülich, Germany.
Get access

Abstract

The technique of external reflection infrared (IR) spectroscopy is used to study silicon surface chemistry. External reflection is enhanced by implanting a buried cobalt silicide layer in silicon to act as an infrared reflector. The preparation of clean well-ordered surfaces from the ion implanted substrates is demonstrated. The reactions of water and ethanol with Si(100) are investigated.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 395
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Bermudez, V. M., J. Vac. Sci. Technol. A 10, 152 (1992);Google Scholar
(b) McGonigal, M., Bermudez, V. M., and Butler, J. E., J. Elec. Spec. Rel. Phen. 54/55, 1033 (1990).Google Scholar
2 Erley, W., Butz, R, and Mantl, S., Surf. Sci 248, 193 (1991);Google Scholar
(b) Mantl, S. and Bay, H. L., Appl. Phys. Lett. 61, 267 (1992); The CoSi2 layer is prepared in this paper by a deposition process.Google Scholar
3 Chabal, J., Hines, M. A., and Feijóo, D., J. Vac. Sci. Technol. A 13, to be published.Google Scholar
4 White, A- E., Short, K. T., Dynes, R C., Garno, J. P., and Gibson, J. M., Appl. Phys. Lett. 50, 95 (1987);Google Scholar
(b) Hull, R., White, A. E., Short, K. T., and Bonar, J. M., J. Appl. Phys. 68, 1629 (1990).Google Scholar
5 Higashi, G. S., Chabal, Y. J., Trucks, G. W., and Raghavachari, K., Appl. Phys. Lett 56, 656 (1990).Google Scholar
6 Chabal, Y. J., Surf. Sci. 168 594 (1986).Google Scholar
7 Williams, G. P., Int. J. Infrared Millimeter Waves 5, 529 (1984);Google Scholar
(b) Williams, G. P., Nucl. Instrum. Methods A 291, 8 (1990);Google Scholar
(c) Williams, G. P., Rev. Sci. Instrum. 63, 1535 (1992).Google Scholar
8 Ibach, H., Wagner, H., and Bruchmann, D., Solid State Comm. 42, 457 (1982);Google Scholar
(b) Stucki, F., Anderson, J., Lapeyre, G. J., and Farrell, H. H., Surf. Sci. 143, 84 (1984).Google Scholar
9 Chabal, Y. J. and Christman, S. B., Phys. Rev. B 29, 6974 (1984).Google Scholar
10 Struck, L. M., et al., manuscript in preparation.Google Scholar
11 Tedder, L. L., Crowell, J. E., and Logan, M. A., J. Vac. Sci. Technol. A 9, 1002 (1991);Google Scholar
(b) Tedder, L. L., Lu, G., and Crowell, J. E., J. Appl. Phys. 69, 7037 (1991).Google Scholar
12 Edamoto, K., Kubota, Y., Onchi, M., and Nishijima, M., Surf. Sci. 146, L533 (1984);Google Scholar
(b) Stroscio, J. A., Bare, S. R, and Ho, W., Surf. Sci. 154, 35 (1985).Google Scholar
13 Ying, Z. and Ho, W., Surf. Sci. 198, 473 (1988).Google Scholar
14 Shimanouchi, T., Tables of Molecular Vibrational Frequencies, Consolidated Volume I, Nat. Stand. Ref. Data Ser., Nat Bur. Stand. (U.S.) 39 (1972) pp. 104–105;Google Scholar
(b) The Sadtler Handbook of Infrared Spectra, (Philadelphia: Sadtler Research Laboratories, 1978) p. 464.Google Scholar
15 Eng, J. Jr., et al., manuscript in preparation.Google Scholar