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Silicon photonics transceivers with InP on Si lasers

Published online by Cambridge University Press:  29 May 2013

JM. Fedeli ,
G.H. Duan ,
L. Vivien ,
JM. Hartmann ,
D. Marris-Morini ,
A. Le Liepvre ,
S. Messaoudene ,
D. Bordel ,
C. Jany  and
L Virot
...Show all authors
JM. Fedeli
Affiliation:
CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 GRENOBLE cedex 9, France
G.H. Duan
Affiliation:
III-V Lab, a joint lab of Alcatel-Lucent Bell Labs France, Thales Research and CEA' , Avenue A. Fresnel, 91767 Palaiseau, France
L. Vivien
Affiliation:
Institut d’Electronique Fondamentale, Univ Paris-Sud, CNRS, Bât. 220, F-91405 ORSAY France.
JM. Hartmann
Affiliation:
CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 GRENOBLE cedex 9, France
D. Marris-Morini
Affiliation:
Institut d’Electronique Fondamentale, Univ Paris-Sud, CNRS, Bât. 220, F-91405 ORSAY France.
A. Le Liepvre
Affiliation:
III-V Lab, a joint lab of Alcatel-Lucent Bell Labs France, Thales Research and CEA' , Avenue A. Fresnel, 91767 Palaiseau, France
S. Messaoudene
Affiliation:
CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 GRENOBLE cedex 9, France
D. Bordel
Affiliation:
CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 GRENOBLE cedex 9, France
C. Jany
Affiliation:
III-V Lab, a joint lab of Alcatel-Lucent Bell Labs France, Thales Research and CEA' , Avenue A. Fresnel, 91767 Palaiseau, France
L Virot
Affiliation:
CEA, LETI, Minatec Campus, 17 rue des Martyrs, F-38054 GRENOBLE cedex 9, France Institut d’Electronique Fondamentale, Univ Paris-Sud, CNRS, Bât. 220, F-91405 ORSAY France.
F. Lelarge
Affiliation:
III-V Lab, a joint lab of Alcatel-Lucent Bell Labs France, Thales Research and CEA' , Avenue A. Fresnel, 91767 Palaiseau, France
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Abstract

Under the FP7 HELIOS project a 16 channel 10G transceiver based on a separate integrated transmitter incorporating hybrid lasers and modulators on silicon and a separate receiver both for 1550nm wavelength range has been demonstrated. An MZM (ITLMZ) chip consisting of a single mode hybrid III-V/silicon laser, a silicon Mach-Zehnder (MZ) modulator and an optical output coupler exhibited 10G operation with high BER. A 200GHz 16 channel receiver with polarization management was obtained with a 2D grating coupler, 2xAWGs and 16 Ge photodiodes. Polarization Dispersion Loss (PDL) was below 1dB, Bandwidth (BW) above 20GHz, receiver sensitivity in the order of 0.08 A/W

Keywords

optoelectroniclaserphotoconductivity
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1559: Symposium AA – Advanced Interconnects for Micro- and Nanoelectronics—Materials, Processes and Reliability , 2013 , mrss13-1559-aa02-05
Copyright
Copyright © Materials Research Society 2013 

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References

REFERENCES

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