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Silicon Oxynitride and Oxide-Nitride-Oxide Gate Dielectrics by Combined Plasma-Rapid Thermal Processing

Published online by Cambridge University Press:  22 February 2011

Y. Ma ,
S.V. Hattangady ,
T. Yasuda ,
H. Niimi ,
S. Gandhi  and
G. Lucovsky
Y. Ma
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695
S.V. Hattangady
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695
T. Yasuda
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695
H. Niimi
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695
S. Gandhi
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695
G. Lucovsky
Affiliation:
Departments of Materials Science and Engineering, Electrical and Computer Engineering, and Physics, North Carolina State University, Raleigh, NC 27695
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Abstract

We have used a combination of plasma and rapid thermal processing for the formation of thin gate-dielectric films. The bulk dielectric films investigated include silicon oxide, oxynitride and multilayer oxide-nitride-oxide heterostructures formed by plasma-assisted oxidation, remoteplasma-enhanced chemical-vapor deposition (remote-PECVD) followed by post-deposition rapid thermal annealing (RTA). Auger electron spectroscopy (AES) and infrared absorption spectroscopy (IR) have been used to study the chemistry of interface formation and the bulk dielectric chemical bonding, respectively. Electrical characterization of MOS capacitor structures incorporating these dielectrics was performed by conventional capacitance and current voltage techniques, C-V and I-V, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 169
Copyright
Copyright © Materials Research Society 1994

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References

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