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Si/GaAs heterostructures fabricated by direct wafer bonding

Published online by Cambridge University Press:  21 March 2011

Viorel Dragoi ,
Marin Alexe ,
Manfred Reiche ,
Ionut Radu ,
Erich Thallner ,
Christian Schaefer  and
Paul Lindner
Viorel Dragoi
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany
Marin Alexe
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany
Manfred Reiche
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany
Ionut Radu
Affiliation:
Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany
Erich Thallner
Affiliation:
EV Group, St. Florian, A-4780 Schärding, Austria
Christian Schaefer
Affiliation:
EV Group, St. Florian, A-4780 Schärding, Austria
Paul Lindner
Affiliation:
EV Group, St. Florian, A-4780 Schärding, Austria
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Abstract

Si/GaAs heterostructures were obtained by a low temperature direct wafer bonding (DWB) method which uses spin-on glass (SOG) intermediate layers. The use of intermediate SOG layers allows the fabrication of Si/GaAs heterostructures at processing temperatures lower than 200°C. The achieved bonding energy permits thinning down to a few microns of Si and GaAs wafers, respectively, using grinding procedures followed by chemical mechanical polishing (CMP). After thinning, the heterostructures sustained annealing temperatures of 450°C without damaging of the bonded interface. The above bonding procedure was successfully applied for bonding GaAs wafers to Si wafers with structured surfaces. A technology was developed based on this bonding method for producing universal GaAs-on-Si or Si-on-GaAs substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I5.3
Copyright
Copyright © Materials Research Society 2001

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References

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