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SiC-Si Grooved Surface Bonding

Published online by Cambridge University Press:  21 March 2011

Tatiana S. Agrunova ,
Igor V. Grekhov ,
Lioudmila S. Kostina ,
Alexander G. Tur'yanskii ,
Igor V. Pirshin ,
Ilya R. Prudnikov  and
Konstantin B. Kostin
Tatiana S. Agrunova
Affiliation:
Solid State Electronics Division, Ioffe Physico-Technical Institute RAS, Polytekhnicheskaya ul. 26, 194021, St. Petersburg, RUSSIA
Igor V. Grekhov
Affiliation:
Solid State Electronics Division, Ioffe Physico-Technical Institute RAS, Polytekhnicheskaya ul. 26, 194021, St. Petersburg, RUSSIA
Lioudmila S. Kostina
Affiliation:
Solid State Electronics Division, Ioffe Physico-Technical Institute RAS, Polytekhnicheskaya ul. 26, 194021, St. Petersburg, RUSSIA
Alexander G. Tur'yanskii
Affiliation:
Lebedev Physical Institute RAS, Leninskii pr. 53, 117924, Moscow, RUSSIA
Igor V. Pirshin
Affiliation:
Lebedev Physical Institute RAS, Leninskii pr. 53, 117924, Moscow, RUSSIA
Ilya R. Prudnikov
Affiliation:
Physics Department, Moscow State University, Vorob'evy Gory, 119899, Moscow, RUSSIA
Konstantin B. Kostin
Affiliation:
Materials Science Department, Christian-Albrechts-University of Kiel, Kaiserstr. 2, Kiel 24143, GERMANY
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Abstract

SiC Lely platelets and SiC epilayers on large area SiC substrates were directly bonded to non-oxidized grooved surface silicon wafers in order to obtain structures prospective for the design of power bipolar devices with wide band-gap emitter junctions. The reported capabilities of grooved interfaces to reduce elastic strain and intrinsic sources of an interfacial potential barrier were utilized. The influence of surface morphology on the structural perfection of the bonded samples was studied in detail by X-ray and AFM techniques. As compared to traditional bonding technology, experimental data showed an easier smooth-to-grooved surface bonding accomplished in the formation of the boundary with better continuity and strength. For 2 in. diameter SiC wafers with root mean square height of roughness σ=16 Å and lateral coherence length L=1.8 μm bonding continuity not smaller than 90% was reached, while the crystals with σ=30 Å, L=5 μm failed to bond to Si even under an external force.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 681: Symposium I – Wafer Bonding and Thinning Techniques for Materials Integration , 2001 , I5.6
Copyright
Copyright © Materials Research Society 2001

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References

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