Hostname: page-component-cd9895bd7-dzt6s Total loading time: 0 Render date: 2024-12-27T02:06:43.215Z Has data issue: false hasContentIssue false
  • English
  • Français

SiC-based 1D Nanostructures

Published online by Cambridge University Press:  18 July 2013

Maelig Ollivier ,
Laurence Latu-Romain ,
Mickaël Martin ,
Arnaud Mantoux  and
Edwige Bano
Maelig Ollivier*
Affiliation:
Laboratoire des Technologies de la Microélectronique, CNRS UMR 5129, 17, rue des martyrs, 38054 Grenoble cedex 9, France IMEP-LAHC Grenoble INP - Minatec: 3, rue Parvis Louis Néel - BP 257 - F38016 Grenoble Cedex 1, France SIMaP, Grenoble-INP, CNRS, UJF, 1130 rue de la piscine, BP 75, 38402 Saint Martin d’Hères, France
Laurence Latu-Romain*
Affiliation:
Laboratoire des Technologies de la Microélectronique, CNRS UMR 5129, 17, rue des martyrs, 38054 Grenoble cedex 9, France
Mickaël Martin
Affiliation:
Laboratoire des Technologies de la Microélectronique, CNRS UMR 5129, 17, rue des martyrs, 38054 Grenoble cedex 9, France
Arnaud Mantoux
Affiliation:
SIMaP, Grenoble-INP, CNRS, UJF, 1130 rue de la piscine, BP 75, 38402 Saint Martin d’Hères, France
Edwige Bano
Affiliation:
IMEP-LAHC Grenoble INP - Minatec: 3, rue Parvis Louis Néel - BP 257 - F38016 Grenoble Cedex 1, France
*
*Email: [email protected]
*Email: [email protected]
Get access

Abstract

Thanks to an original approach based on the carburization of silicon nanowires, silicon carbide-based one dimensional nanostructures – SiC nanotubes, Si-SiC core-shell nanowires and SiC nanowires – have been synthesized. The original process, which relies on controlling the out-diffusion of Si atoms through SiC, can be monitored by the temperature, the pressure and the time of carburization. These SiC-based 1D nanostructures have been characterized by SEM, FIB-SEM and TEM microscopies and also Raman spectroscopy. Bio-nano-sensors, nano-Field-Effect-Transistors (nano-FETs) or gas sensors may be some applications for these nanostructures.

Keywords

carbonizationdiffusionion-beam processing
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1551: Symposium R – Nanostructured Semiconductors and Nanotechnology , 2013 , pp. 23 - 28
Copyright
Copyright © Materials Research Society 2013 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Lu, W. and Lieber, C.M.. Nanoelectronics from the bottom up. Nature Materials, 6, November 2007.CrossRefGoogle ScholarPubMed
Morkoç, H., Strite, S., Gao, G.B., Lin, M.E., Sverdlov, B., and Burns, M.. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor-device technologies. Journal of Applied Physics, 76(3):1363–1398, AUG 1 1994.CrossRefGoogle Scholar
Saddow, S.. Silicon Carbide Biotechnology: A Biocompatible Semiconductor for Advanced Biomedical Devices and Applications. Elsevier Science, 2011.Google Scholar
Yakimova, R., Steinhoff, G., Petoral, R.M. Jr., Vahlberg, C., Khranovskyy, V., Yazdi, G.R., Uvdal, K., and Lloyd Spetz, A.. Novel material concepts of transducers for chemical and biosensors. Biosensors and Bioelectronics, 22:2780–2785, 2007.CrossRefGoogle ScholarPubMed
Hilder, T.A. and Hill, J.M.. Theoretical comparison of nanotube materials for drug delivery. Micro & Nano Letters, 3(1):18–24, MAR 2008.CrossRefGoogle Scholar
Jang, C.O., Kim, T.H., Lee, S.Y., Kim, D.J., and Lee, S.K.. Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors. Nanotechnology, 19(345203), 2008.CrossRefGoogle ScholarPubMed
Rogdakis, K., Bano, E., Montes, L., Bechelany, M., Cornu, D., and Zekentes, K.. Rectifying source and drain contacts for effective carrier transport modulation of extremely doped SiC nanowire FETs. IEEE Transactions on Nanotechnology, 10(5):980–984, SEP 2011.CrossRefGoogle Scholar
Senesky, D.G., Jamshidi, B., Cheng, K.B., and Pisano, A.P.. Harsh environment silicon carbide sensors for health and performance monitoring of aerospace systems: A review. IEEE Sensors Journal, 9(11):1472–1478, NOV 2009.CrossRefGoogle Scholar
Dai, H., Wong, E.W., Lu, Y.Z., Fan, S., and Lieber, C.M.. Synthesis and characterization of carbide nanorods. Nature, 375:769–772, 1995.CrossRefGoogle Scholar
Pan, Z., Lai, H.L., Au, Frederick C.K., Duan, X., Zhou, W., Shi, W., Wang, N., Lee, C.S., Wong, N.B., Lee, S.T., and Xie, S.. Oriented silicon carbide nanowires: Synthesis and field emission properties. Advanced Materials, 12(16), August 2000.3.0.CO;2-F>CrossRefGoogle Scholar
Chiu, S.C. and Li, Y.Y.. SiC nanowires in large quantities: Synthesis, band gap characterization, and photoluminescence properties. Journal of Crystal Growth, 311:1036–1041, 2009.CrossRefGoogle Scholar
Wang, D.H., Xu, D., Wang, Q., Hao, Y.J., Jin, G.Q., Guo, X.Y., and Tu, K.N.. Periodically twinned SiC nanowires. Nanotechnology, 19(215602), 2008.Google ScholarPubMed
Chen, J., Pan, Y., and Wu, R.. Growth mechanism of twinned SiC nanowires synthesized by a simple thermal evaporation method. Physica E, 42:2335–2340, 2010.CrossRefGoogle Scholar
Gu, X., Qiang, Y., and Zhao, Y.. Synthesis, structural and electrical properties of SiC nanowires via a simple CVD method. Journal of Materials Science - materials in electronics, 23(5):1037–1040, MAY 2012.CrossRefGoogle Scholar
Zekentes, K. and Rogdakis, K.. SiC nanowires: material and devices. Journal of Physics D: Applied Physics, 44, 2011.CrossRefGoogle Scholar
Keller, N., Pham-Huu, C., Ehret, G., Keller, V., and Ledoux, M.J.. Synthesis and characterisation of medium surface area silicon carbide nanotubes. Carbon, 41:2131–2139, 2003.CrossRefGoogle Scholar
Pei, L.Z., Tang, Y.H., Chen, Y.W., Guo, C., Li, X.X., Yuan, Y., and Zhang, Y.. Preparation of silicon carbide nanotubes by hydrothermal method. Journal of Applied Physics, 99(114306), 2006.CrossRefGoogle Scholar
Ollivier, M., Latu-Romain, L., Martin, M., David, S., Mantoux, A., Bano, E., Soulière, V., Ferro, G., and Baron, T.. Si-sic core-shell nanowires. Journal of Crystal Growth, 363(0):158–163, 2013.CrossRefGoogle Scholar
Latu-Romain, L., Ollivier, M., Thiney, V., Chaix-Pluchery, O., and Martin, M.. Silicon carbide nanotubes growth: an original approach. Journal of Physics D: Applied Physics, 46(9):092001, 2013.CrossRefGoogle Scholar
Nakashima, S. and Harima, H.. Raman investigation of SiC polytypes. Physica Status Solidi a, 162(39):39–64, 1997.3.0.CO;2-L>CrossRefGoogle Scholar