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Shallow and Low-Resistive Ohmic Contacts to p-In0.53Ga0. 47As Based on Pd/Au and Pd/Sb Metallizations

Published online by Cambridge University Press:  15 February 2011

P. Ressel ,
L. C. Wang ,
M. H. Park ,
P. W. Leech ,
G. K. Reeves  and
E. Kuphal
P. Ressel
Affiliation:
Ferdinand-Braun-Institut für Höchstfrequenztechnik, D- 12489 Berlin, Germany
L. C. Wang
Affiliation:
Texas A&M University, College Station, TX 77843
M. H. Park
Affiliation:
Texas A&M University, College Station, TX 77843
P. W. Leech
Affiliation:
Telstra Research Laboratories, Clayton 3169, Victoria, Australia
G. K. Reeves
Affiliation:
Royal Melbourne Institute of Technology, Melbourne 3001, Victoria, Australia
E. Kuphal
Affiliation:
Deutsche Telekom, TZ, D-64295 Darmstadt, Germany
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Abstract

InP/In0.53Ga0.47As heterojunction bipolar transistors with high current gain for optoelectronic applications place stringent requirements on the ohmic contact to the base layer of moderately doped (p < 1×1019 cm−3) In0.53Ga0.47As. Contact resistivity should be <l×10−6 Ωcm2 and low depth of penetration is necessary considering the small base thickness of approximately 100 nm. The authors have recently presented data on Pd/Zn/Au/LaB6/Au contacts on p-In0.53Ga0.47As (doped to 4×1018 cm−3) with low contact resistivities of l×10−6 Ωcm2. In this paper, details are given on the optimization of the contact composition and annealing conditions of the metallization that resulted in shallow and low-resistive contacts. Alternatively, it is shown that Au-free Pd/Zn/Sb/Pd contacts on p-In0.53Ga0.47As have exhibited even lower resistivities, i.e. 3-6×10−7 Ωcm2. Backside SIMS measurements revealed a depth of penetration as low as 20 nm for this contact scheme. Aging tests at temperatures of 300 - 400 °C have demonstrated that the electrical characteristics of both types of metallization were sufficiently stable to withstand the typical processing steps for device passivation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 427: Symposium K – Advanced Metallization for Future ULSI , 1996 , 577
Copyright
Copyright © Materials Research Society 1996

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References

1. Ressel, P., Strusny, H., Vogel, K., Wfirfl, J., Wesch, W., Lenk, G., Kuphal, E., Fritzsche, D., Kraiutle, H., and Mause, K. in Proc. 7th Int. Conf. InP & Rel. Mater., 1995, May 9–13, Sapporo, Japan, p. 668–67 1.Google Scholar
2. Leech, P. W., Ressel, P., Reeves, G. K., Zhou, W., and Kuphal, E. in Diagnostic Techniques for Semiconductor Materials Processing II, edited by Pang, S. W., Glembocki, O. J., Pollak, F. H., Celii, F., and Torres, C. M. S. (Mater. Res. Soc. Proc. 406, Pittsburgh, PA 1996).Google Scholar
3. Park, M. H., Wang, L. C., Deng, F., Clawson, A., Lau, S. S., Cheng, J. Y., Hwang, D. M., and Palmstrom, C. J. in Proc. 7th Int. Conf. InP & Rel. Mater., 1995, May 9–13, Sapporo, Japan, p. 672–673.Google Scholar
4. Leech, P. W. and Reeves, G. K., J. Appl. Phys. 77, 1995, p. 3908–3912.Google Scholar
5. Ressel, P., Strusny, H., Vogel, K., Wurfl, J., Fritzsche, D., Kriutle, H., Kuphal, E., Mause, K., Trapp, M., and Richter, U., J. Vac. Sci. & Techn. B 13, 1995, p. 2297–2305.Google Scholar
6. Österle, W. and Ressel, P., accepted for publication in Mater. Sci. & Eng. B.Google Scholar
7. Ressel, P., Vogel, K., Fritzsche, D., and Mause, K., Electron. Lett. 28, 1992, p. 2237–2238.Google Scholar