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Self-Interstitials and Substitutional C in Silicon: Interstitial- Trapping and C– Clustering

Published online by Cambridge University Press:  01 February 2011

S. Mirabella ,
S. Scalese ,
A. Terrasi ,
F. Priolo ,
A. Coati ,
D. De Salvador ,
E. Napolitani  and
M. Berti
S. Mirabella
Affiliation:
INFM and Dept. of Physics and Astronomy, University of Catania, Corso Italia 57, 95129 Catania, Italy
S. Scalese
Affiliation:
INFM and Dept. of Physics and Astronomy, University of Catania, Corso Italia 57, 95129 Catania, Italy
A. Terrasi
Affiliation:
INFM and Dept. of Physics and Astronomy, University of Catania, Corso Italia 57, 95129 Catania, Italy
F. Priolo
Affiliation:
INFM and Dept. of Physics and Astronomy, University of Catania, Corso Italia 57, 95129 Catania, Italy
A. Coati
Affiliation:
INFM and Dept. of Physics, University of Padova, Via Marzolo 8, 35131 Padova, Italy
D. De Salvador
Affiliation:
INFM and Dept. of Physics, University of Padova, Via Marzolo 8, 35131 Padova, Italy
E. Napolitani
Affiliation:
INFM and Dept. of Physics, University of Padova, Via Marzolo 8, 35131 Padova, Italy
M. Berti
Affiliation:
INFM and Dept. of Physics, University of Padova, Via Marzolo 8, 35131 Padova, Italy
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Abstract

The interactions between self-interstitials (I's) produced by 20 keV silicon implantation, and substitutional carbon in silicon have been studied using a Si1-yCy layer interposed between a near surface I source and a deeper B spike used as a marker for the I concentration. The Si1-yCy layer behaves as a filtering membrane for the interstitials flowing towards the bulk. This trapping ability is related to the total C amount in the Si1-yCy membrane. Substitutional carbon atoms interacting with self-interstitials are shown to trap I's, to be removed from their substitutional sites, and to precipitate into the C-rich region. After precipitation, C atoms are not able to further trap injected self-interstitials. The atomistic mechanism leading to Si-interstitial trapping has been investigated by developing a simulation code describing the migration of injected interstitials. By a comparison with the experimental data it was possible to derive quantitative indications on the trapping mechanism. It is shown that one Si-interstitial is able to deactivate about two C traps by means of interstitial trapping and C-clustering reactions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 717: Symposium C – Si Front-End Junction Formation Technologies , 2002 , C5.5
Copyright
Copyright © Materials Research Society 2002

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