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Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Arsenic Implanted Silicon

Published online by Cambridge University Press:  10 February 2011

Hua Fang ,
Mehmet C. Özttirk  and
Edmund G. Seebauer
Hua Fang
Affiliation:
ECE Department, North Carolina State University, Raleigh, NC 27695-7911
Mehmet C. Özttirk
Affiliation:
ECE Department, North Carolina State University, Raleigh, NC 27695-7911
Edmund G. Seebauer
Affiliation:
Department of Chemical Engineering, University of Illinois at Urbana-Champaign, Urbana-Champaign, Illinois 61801
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Abstract

This work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi2. The films were deposited using TiCI4 and SiH4 on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×1014 cm−2 to 5*times;1015 cm−2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi2 nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surfacepassivation model to explain the effects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 514: Symposium I – Advanced Interconnects & Contact Materials & Processes for… , 1998 , 231
Copyright
Copyright © Materials Research Society 1998

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References

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