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Segregation and Diffusion of Sb Compared to as for Ultra-Shallow Implantation Into Silicon

Published online by Cambridge University Press:  01 February 2011

D. Krüger ,
P. Zaumseil ,
V. Melnik ,
R. Kurps ,
P. Formanek  and
D. Bolze
D. Krüger
Affiliation:
IHP, Frankfurt (Oder), Im Technologiepark 25, 15236 Frankfurt (Oder), Germany, email:[email protected]
P. Zaumseil
Affiliation:
IHP, Frankfurt (Oder), Im Technologiepark 25, 15236 Frankfurt (Oder), Germany, email:[email protected]
V. Melnik
Affiliation:
IHP, Frankfurt (Oder), Im Technologiepark 25, 15236 Frankfurt (Oder), Germany, email:[email protected]
R. Kurps
Affiliation:
IHP, Frankfurt (Oder), Im Technologiepark 25, 15236 Frankfurt (Oder), Germany, email:[email protected]
P. Formanek
Affiliation:
IHP, Frankfurt (Oder), Im Technologiepark 25, 15236 Frankfurt (Oder), Germany, email:[email protected]
D. Bolze
Affiliation:
IHP, Frankfurt (Oder), Im Technologiepark 25, 15236 Frankfurt (Oder), Germany, email:[email protected]
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Abstract

We investigate diffusion and segregation of Sb and As after low energy implantation and annealing. Sb implantation profiles are significantly more stable against segregation for implantation energies higher than 5 keV compared to As. For ultra-shallow profiles and annealing temperatures above 850°C we demonstrate strong Sb and As segregation up to 1021 cm–3 in an interfacial layer less than 3 nm. In comparison to As antimony profiles show reduced tails mainly due to less sensitivity for excess Si self-interstitial effects generated both during implantation defect anneal and during deactivation of heavily n-doped regions by clustering.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 765: Symposium D – CMOS Front-End Materials and Process Technology , 2003 , D5.5
Copyright
Copyright © Materials Research Society 2003

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