Hostname: page-component-586b7cd67f-t8hqh Total loading time: 0 Render date: 2024-11-25T15:14:15.735Z Has data issue: false hasContentIssue false
  • English
  • Français

Science Issues Related to Wafer Cleaning in Silicon Technology

Published online by Cambridge University Press:  25 February 2011

M. Liehr
M. Liehr*
Affiliation:
IBM Research Division, Thomas J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598, USA
Get access

Abstract

This paper highlights a number of basic science issues related to wafer cleaning in silicon technology. Particle removal techniques, metal contamination, surface passivation, and integrated processing are used as key examples of areas of active research related to wafer cleaning. It is highlighted that wafer cleaning plays a far more significant role in device processing than just for contamination removal. However, even contamination removal faces formidable challenges such as the determination of safe contamination limits and the detection of trace amounts of contamination, all of which go well beyond the traditional realm of contamination control.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 3
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kern, W., J. Electrochemical Soc. 137, 1887 (1990).CrossRefGoogle Scholar
2 Burggraaf, P., Semiconductor International 13, 58 (1990).Google Scholar
3 Kern, W. and Puotinen, D. A., RCA Rev. 31, 187 (1970).Google Scholar
4 Miyashita, M., Itano, T., Imaoka, T., Kawanabe, I., and Ohmi, T., Digest of Technical Papers, Symp. on VLSI Technology, Oslo, 1991, p. 45.Google Scholar
5 Liehr, M., Offenberg, M., Kasi, S. R., and Offenberg, G. W., Extended Abstracts of the 22nd Conference on Solid State Devices and Materials, August 1990, Sendai, Japan, p. 1099.Google Scholar
6 Shiraki, H., Japan. J. Appl. Phys. 14, 747 (1975).CrossRefGoogle Scholar
7 Shimono, T. and Tsuji, M., Extended Abstracts ECS Spring Meeting, Vol. 91–1, p. 278 Washington DC, May 1991.Google Scholar
8 Deal, B. E. and Helms, C. R., Vapor Phase Wafer Cleaning Technology, Stanford University Report, CIS # IDEA-600-1, January 1992.Google Scholar
9 Walter, A. E. and McConnell, C. F., Microcontamination 8, 35 (1990).Google Scholar
10 Skidmore, K., Semiconductor International 11, 64 (1988).Google Scholar
11 Nishioka, Y., Ohyu, K., Ohji, Y., Natsuaki, N., Mukal, K., and Ma, T. P., J. Appl. Phys. 66, 3909 (1989).Google Scholar
12 Nishioka, Y., Ohji, Y., Mukai, K., Sugano, T., Wang, Y., and Ma, T. P., Appl. Phys. Lett. 54, 1127 (1989).CrossRefGoogle Scholar
13 Nishioka, Y. and Ma, T. P., Appl. Phys. Lett. 53, 1744 (1988).Google Scholar
14 Kasi, S. R., Liehr, M., and Cohen, S. A., Appl. Phys. Lett. 58, 2975 (1991).CrossRefGoogle Scholar
15 Mittal, K. L., editor, Surface Contamination: Genesis, Detection, and Control, Plenum Press, New York 1979, Vol. 1 and 2.Google Scholar
16 Shwartzman, S., Mayer, A., and Kern, W., RCA Review 46, 81 (1985).Google Scholar
17 Menon, V. B. and Donovan, R. P., Microcontamination 8, 29 (1990).Google Scholar
18 Meerakker, J. E. and Straaten, M. H., J. Electrochem. Soc. 137, 1239 (1990).CrossRefGoogle Scholar
19 Riley, D. J. and Carbonell, R. G., Surfaces, 22nd Annual Meeting of the Fine Particle Society, San Jose, July 1991, Proceedings p.8.Google Scholar
20 Riley, D. J. and Carbonell, R. G., Microcontamination 8, 19 (1990).Google Scholar
21 Ohmori, T., Fukumoto, T., Kato, T., Tada, M., and Kawaguchi, T., First International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, The Electrochemical Society, Proceedings 90-9, p. 182 (1989).Google Scholar
22 Sherman, R. and Whitlock, W., J. Vac. Sci. Technol. B 8, 563 (1990).CrossRefGoogle Scholar
23 Sherman, R., Grob, J., and Whitlock, W., J. Vac. Sci. Technol. B 9, 1970 (1991).CrossRefGoogle Scholar
24 Hoenig, S. A., Zito, R. R., Chaney, K. D., Carlson, T. A., and Cummings, D. C., 9th ICCCS Proceedings, 1988, Institute of Environmental Sciences, p. 671.Google Scholar
25 Hoenig, S. A., Compressed Air Magazine 91, 22 (1986).Google Scholar
26 McDermott, W. T., Ockovic, R. C., Wu, J. J., and Miller, R. J., Microcontamination 9, 33 (1991).Google Scholar
27 Seibt, M. and Graff, K., J. Appl. Physics 63, 4444 (1988).Google Scholar
28 Sze, S., Physics of Semiconductor Devices, Wiley Interscience publication, New York, 1981.Google Scholar
29 Sze, S. M. and Irvin, J. C., Solid State Electronics 11, 599 (1966).CrossRefGoogle Scholar
30 Busta, H. H. and Waggener, H. A., J. Electrochem. Soc. 124, 1424 (1977).CrossRefGoogle Scholar
31 Graff, K., Aggregation Phenomena of Point Defects in Silicon, eds. Sirtl, E., Goorissen, J., Wagner, P., Electrochemical Society, Pennington, N.J. (1983), p. 121.Google Scholar
32 Bergholtz, W., Zoth, G., Wendt, H., Sauter, S., and Asam, G., Siemens Research and Development Reports 16, 241 (1987).Google Scholar
33 Davis, J. R., Rohatgi, A., Hopkins, R. H., Blais, P. D., RainChoudhury, P., McCormick, J. R., and Mollenkopf, H. C., IEEE Transactions on Electron Devices ED–27, 677 (1980).CrossRefGoogle Scholar
34 Goetzberger, A. and Shockley, W., J. Appl. Phys. 31, 1821 (1960).Google Scholar
35 Rozgonyi, G. A. and Kushner, R. A., J. Electrochem. Soc. 123, 570 (1976).Google Scholar
36 Maurice, J. and Colliex, C., Appl. Phys. Lett. 55, 241 (1989).CrossRefGoogle Scholar
37 Seibt, M. and Graff, K., Defects in Electronic Materials, eds. Stavola, M., Pearton, S. J., Davies, G., Materials Research Society, Pittsburgh, PA, Vol. 104 (1988).Google Scholar
38 Lin, P., Marcus, R., and Sheng, T., J. Electrochem. Soc. 130, 1878 (1983).CrossRefGoogle Scholar
39 Hahn, P. O., Grundner, M., Schnegg, A., and Jacob, H., Appi Surf. Sci. 39, 436 (1989).CrossRefGoogle Scholar
40 Rubloff, G., Hofmann, K., Liehr, M., and Young, D., Phys. Rev. Lett. 58, 2379 (1987).Google Scholar
41 Liehr, M., Bronner, G. B., and Lewis, J. E., Appl. Phys. Lett. 52, 1892 (1988).Google Scholar
42 Liehr, M., Dallaporta, H., and Lewis, J., Appl. Phys. Lett. 53, 589 (1988).Google Scholar
43 Dallaporta, H., Liehr, M., and Lewis, J., Phys. Rev. B 41, 5075 (1990).Google Scholar
44 Hiratsuka, H., Tanaka, M., Tada, T., Yoshimura, R., and Matsushita, Y., Procedings 11th Workshop on ULSI Ultra Clean Technology, Advanced Wet Processing II, June 6, 1991, Ultra Clean Society, Tokyo, Japan, p.3.Google Scholar
45 Kern, F. W., Itano, M., Kawanabe, I., Miyashlta, M., Rosenberg, R. W., and Ohmi, T., Procedings 11th Workshop on ULSI Ultra Clean Technology, Advanced Wet Processing II, June 6, 1991, Ultra Clean Society, Tokyo, Japan, p.21.Google Scholar
46 Hosoya, T., Ozaki, Y., and Hirata, K., J. Electrochem. Soc. 132, 2436 (1985).Google Scholar
47 Kniffin, M. L. and Helms, C. R., Extended Abstracts of the 23rd Conference on Solid State Devices and Materials, August 1991, Yokohama, Japan, p. 493.Google Scholar
48 Rajeevakumar, T. V., Lii, T., Weinberg, Z. A., Bronner, G. B., McFarland, P., Coane, P., Kwietniak, K., Stein, K. J., and Cohen, S. A., Technical Digest of the IEDM, Decembel 1991, Washington DC, p. 835.Google Scholar
49 Itoh, T., Sugino, R., Watanabe, S., Nara, Y., and Sato, Y., First International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, The Electrochemical Society, Proceedings 90-9, p. 114 (1989).Google Scholar
50 Eichinger, P., GeMeTech Gesellschft for Messtechnik und Technologie mbH Munich.Google Scholar
51 Eichinger, P., Rath, H. J., and Schwenke, H., Semiconductor Fabrication: Technology and Metrology, ASTM STP, 990, p. 305 (1989).Google Scholar
52 Jurgens, U., Cramer, H. G., Heller, T., Niehuis, E., Zhang, Z., and Benninghoven, A., Eighth International Conf. on SIMS, Amsterdam, Sept. 1991.Google Scholar
53 Klockenkamper, R., Spectroscopy 5(6), 26 (1990).Google Scholar
54 Hourai, M., Naridomri, T., Oka, Y., Murakami, K., Sumita, S., Fujino, N., and Shiraiwa, T., Jpn. J. Appl. Phys. 27, L2361 (1988).Google Scholar
55 Tanizoe, Y., Sumita, S., Sano, M., Fujino, N., and Shiraiwa, T., Bunseki Kagaku 38, 177 (1989).Google Scholar
56 Liehr, M., J. Vac. Scd. Technol. A 8, 1939 (1990).Google Scholar
57 Grundner, M. and Jacob, H., Appl. Phys. A 39, 73 (1986).Google Scholar
58 Burrows, V. A., Chabal, Y. J., Higashi, G. S., Raghavachari, K., and Christman, S. B., Appl. Phys. Lett. 53, 998 (1988).CrossRefGoogle Scholar
59 Kasi, S. R., Liehr, M., and Cohen, S. A., Appl. Phys. Lett. 58, 2975 (1991).Google Scholar
60 Haring, R. A. and Liehr, M., J. Vac. Sci. Technol., A10 (4), (1992), to be published.Google Scholar
61 Yasaka, T., Kanda, K., Sawara, K., Miyasaki, S., and Hirose, M., Extended Abstracts of the 23rd Conference on Solid State Devices and Materials, August 1991, Yokohama, Japan, p. 487.Google Scholar
62 Hirashita, N., Kinoshita, M., Aikawa, I., and Ajioka, T., Appl. Phys. Lett. 56, 451 (1990).CrossRefGoogle Scholar
63 Kasi, S. R., Liehr, M., Thiry, P. A., Dallaporta, H., and Offenberg, M., Appl. Phys. Lett. 59, 108 (1991).Google Scholar
64 Vig, J. R., J. Vac Sci. Technol. A 3, 1027 (1985).Google Scholar
65 Kasi, S. R. and Liehr, M., Appl. Phys. Lett. 57, 2095 (1990).Google Scholar
66 Ishii, M., Nakashima, K., Tajima, I., and Yamamoto, M., Appl. Phys. Lett. 58, 1378 (1991).CrossRefGoogle Scholar
67 Ramm, J., Beck, E., Domman, A., Eisele, I., Lorenz, H., and ZOger, A., Workshop proceedings of Silicon Ultraclean Processing, Oxford, UK, Sept. 1991.Google Scholar
68 Meyerson, B. S., Appl. Phys. Lett. 48, 797 (1986).Google Scholar
69 Meyerson, B. S., Himpsel, F., and Uram, K., Appl. Phys. Lett. 57, 1034 (1990).Google Scholar
70 Suemitsu, M., Kaneko, T., and Miyamoto, N., Jpn. Jour. Appl. Phys. 28, 2421 (1989).Google Scholar
71 Liehr, M., Greenlief, C. M., Offenberg, M., and Kasi, S. R., J. Vac. Sci. Technol. A 8, 2960 (1990).Google Scholar
72 Liehr, M., Greenlief, C. M., Kasi, S. R., and Offenberg, M., Appl. Phys. Lett. 56, 629 (1990).Google Scholar
73 Offenberg, M., Liehr, M., Kasi, S. R., and Rubloff, G. W., Abstract of Symposium on VLSI Technology, Honolulu, Hawaii 1990, 117 (1990).Google Scholar
74 Offenberg, M., Liehr, M., and Rubloff, G. W., Appl. Phys. Lett. 57, 1254 (1990).Google Scholar
75 Smith, F. and Ghidini, G., J. Electrochem. Soc. 129, 1300 (1982).Google Scholar
76 Offenberg, M., Extended Abstracts of the Spring Meeting of the Electrochemical Society, May 6-11, Montreal, Canada, p.705, 1990.Google Scholar
77 Liehr, M., Lewis, J., and Rubloff, G., J. Vac. Sci. Technol. AS, 1559 (1987).Google Scholar
78 Tipton, C. M. and Bowling, R. A., First International Symposium on Cleaning Technology in Semiconductor Device Manufacturing, The Electrochemical Society, Proceedings 90-9, p. 33 (1989).Google Scholar