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Schottky - Barrier Tunnelling Spectroscopy of Si:B Delta Layers

Published online by Cambridge University Press:  22 February 2011

R. G. Biswas ,
G. Braithwaite ,
P. J. Phillips ,
R. A. Kubiak ,
E. H. C. Parker ,
T. E. Whall ,
A. Wood  and
A. O'Neill
R. G. Biswas
Affiliation:
Department of Physics, University of Warwick, Coventry, CV4 7AL.
G. Braithwaite
Affiliation:
Department of Physics, University of Warwick, Coventry, CV4 7AL.
P. J. Phillips
Affiliation:
Department of Physics, University of Warwick, Coventry, CV4 7AL.
R. A. Kubiak
Affiliation:
Department of Physics, University of Warwick, Coventry, CV4 7AL.
E. H. C. Parker
Affiliation:
Department of Physics, University of Warwick, Coventry, CV4 7AL.
T. E. Whall
Affiliation:
Department of Physics, University of Warwick, Coventry, CV4 7AL.
A. Wood
Affiliation:
The Merz Laboratories, University of Newcastle, Newcastle Upon Tyne, NEI 7RU.
A. O'Neill
Affiliation:
The Merz Laboratories, University of Newcastle, Newcastle Upon Tyne, NEI 7RU.
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Extract

Delta doping in MBE has attracted considerable attention since its inception in 1980 [1], as a vehicle for studies of 2D phenomena and for its potential applications in, for example, FET devices [2] and I.R. detectors [3]. Boron delta doping in silicon is a recent development [4]. In previous papers we have reported on the growth, TEM, CV profiling, SIMS profiling and XRD characterisation of B delta layers [4,5,6]. It is of interest to know if the present growth method [4] produces a dopant sheet a monolayer wide or, in any event, what is the true width. Previous techniques [4,5,6] have yielded values between 0.4nm and 3nm for the width. Schottky barrier tunnelling spectroscopy provides further information on this question, but is also of interest for a study of the electronic structure of the delta layer. It has been used previously for a study of delta doping in III-V materials [7] and also for Sb delta doping in Si [8,9], but there have so far been no reports of its application to Si:B delta layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 220: Symposium B – Silicon Molecular Beam Epitaxy , 1991 , 75
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

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