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Room temperature 1.3–1.55 μm laser-like emission from Ge/Si self-assembled islands in Si-based photonic crystals

Published online by Cambridge University Press:  01 February 2011

J-M. Lourtioz ,
S. David ,
M. El Kurdi ,
C. Kammerer ,
X. Li ,
S. Sauvage ,
A. Chelnokov ,
V. Le Thanh ,
D. Bouchier  and
P. Boucaud
J-M. Lourtioz
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 du CNRS, Université Paris-Sud, Bâtiment 220 - 91405 Orsay -France
S. David
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 du CNRS, Université Paris-Sud, Bâtiment 220 - 91405 Orsay -France
M. El Kurdi
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 du CNRS, Université Paris-Sud, Bâtiment 220 - 91405 Orsay -France
C. Kammerer
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 du CNRS, Université Paris-Sud, Bâtiment 220 - 91405 Orsay -France
X. Li
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 du CNRS, Université Paris-Sud, Bâtiment 220 - 91405 Orsay -France
S. Sauvage
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 du CNRS, Université Paris-Sud, Bâtiment 220 - 91405 Orsay -France
A. Chelnokov
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 du CNRS, Université Paris-Sud, Bâtiment 220 - 91405 Orsay -France
V. Le Thanh
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 du CNRS, Université Paris-Sud, Bâtiment 220 - 91405 Orsay -France
D. Bouchier
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 du CNRS, Université Paris-Sud, Bâtiment 220 - 91405 Orsay -France
P. Boucaud
Affiliation:
Institut d'Electronique Fondamentale, UMR 8622 du CNRS, Université Paris-Sud, Bâtiment 220 - 91405 Orsay -France
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Abstract

Experimental results are reported on various guided optic configurations that combine silicon-based photonic crystals (PC) and Ge/Si quantum island emitters. The feasibility of low-refractive-index-contrast PC waveguides by inductively-coupled-plasma (ICP) etching of buried SiGe/Si waveguides is briefly recalled from a previous work. The main body of the paper is focused on experiments that were carried out on the high-refractive-index-contrast silicon-on-insulator (SOI) system. Self-assembled Ge/Si quantum island layers were deposited on a SOI substrate that was further processed to get two-dimensional PC microcavities and waveguides. The room temperature 1.3–1.55 μm emission from Ge/Si islands is shown to be significantly enhanced in PC microcavities, the strongest enhancement being obtained with the smallest (micropillar-like) cavities surrounded by wide pores. In this latter case, the room-temperature photoluminescence amplitude is more than two-orders of magnitude larger than that of Ge/Si islands grown in unprocessed samples. A superlinear (laser-like) dependence with the optical pumping is observed in the same time. This behavior and other experimental trends would incriminate both a high carrier concentration of the photo-created electron-hole plasma and a good vertical coupling efficiency of the micro-structured silicon. A first attempt to characterize linear PC waveguides is also reported using the wideband luminescence of Ge/Si islands embedded in the guides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 797: Symposium W – Engineered Porosity for Microphotonics and Plasmonics , 2003 , W6.1
Copyright
Copyright © Materials Research Society 2004

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References

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