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The Role of thin Low Temperature Deposited GaAs Films on the two Step Growth of GaAs on Si By Mocvd

Published online by Cambridge University Press:  28 February 2011

Hajine Inuzuka ,
Yasutoshi Suzuki ,
Naomi Awano  and
Kunihiko Hara
Hajine Inuzuka
Affiliation:
Research & Development Department, Nippondenso Co.,Ltd., 1-1 Showa-cho, Kariya, Aichi 448, Japan
Yasutoshi Suzuki
Affiliation:
Research & Development Department, Nippondenso Co.,Ltd., 1-1 Showa-cho, Kariya, Aichi 448, Japan
Naomi Awano
Affiliation:
Research & Development Department, Nippondenso Co.,Ltd., 1-1 Showa-cho, Kariya, Aichi 448, Japan
Kunihiko Hara
Affiliation:
Research & Development Department, Nippondenso Co.,Ltd., 1-1 Showa-cho, Kariya, Aichi 448, Japan
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Abstract

The structural change of the thin low temperature (~450°C) deposited GaAs films and the role for conventional temperature growth were studied by RHEED and cross-sectional TEN observation. The formation of the threedimensional high quality single crystalline islands from continuous twin GaAs layer deposited at low temperature (~450°C) was clarified. These three-dimensional islands act as the seeds for conventional temperature growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 137
Copyright
Copyright © Materials Research Society 1988

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References

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