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The Role of thin Low Temperature Deposited GaAs Films on the two Step Growth of GaAs on Si By Mocvd
Published online by Cambridge University Press: 28 February 2011
Abstract
The structural change of the thin low temperature (~450°C) deposited GaAs films and the role for conventional temperature growth were studied by RHEED and cross-sectional TEN observation. The formation of the threedimensional high quality single crystalline islands from continuous twin GaAs layer deposited at low temperature (~450°C) was clarified. These three-dimensional islands act as the seeds for conventional temperature growth.
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- Copyright © Materials Research Society 1988
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