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Role of RF Power and Gas Mixture in Some Optical and Photoluminescence Properties of Dual-Plasma a-C:H Films

Published online by Cambridge University Press:  10 February 2011

T. Heitz ,
C. Godet ,
J.E. Bouree ,
B. Drevillon ,
V. Chu ,
J.P. Conde  and
C. Clerc
T. Heitz
Affiliation:
LPICM (UMR 7647 CNRS) Ecole Polytechnique, 91128 Palaiseau (France)
C. Godet
Affiliation:
LPICM (UMR 7647 CNRS) Ecole Polytechnique, 91128 Palaiseau (France)
J.E. Bouree
Affiliation:
LPICM (UMR 7647 CNRS) Ecole Polytechnique, 91128 Palaiseau (France)
B. Drevillon
Affiliation:
LPICM (UMR 7647 CNRS) Ecole Polytechnique, 91128 Palaiseau (France)
V. Chu
Affiliation:
INESC, Alves Redol 9, 1000 Lisboa (Portugal)
J.P. Conde
Affiliation:
IST, Department of Materials Engineering, Av. Rovisco Pais, 1096 Lisboa (Portugal)
C. Clerc
Affiliation:
CSNSM, Bat. 104-108, Université Paris-Sud, 91405 Orsay (France)
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Abstract

Electronic properties of polymer-like hydrogenated amorphous carbon films, grown in a RF-assisted microwave plasma reactor, have been studied using optical absorption and photoluminescence spectroscopies. Using a Forouhi-Bloomer parametrization of π-π* transitions, two regimes are evidenced for increasing C atom density : a decrease of the optical gap Eππ* at constant (H/H+C) content attributed to sp2C clustering, followed by some H elimination with minor changes in Eππ* due to cross-linking of polymer chains. The photoluminescence efficiency in the visible range (peak at ≈ 2.3 eV) is found to decrease over four orders of magnitude at the onset of the cross-linking regime. This quenching is attributed to stress-induced non-radiative centers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 203
Copyright
Copyright © Materials Research Society 1998

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