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The Role of Preamorphization and Activation for Ultra Shallow Junction Formation on Strained Si Layers Grown on SiGe Buffer

Published online by Cambridge University Press:  17 March 2011

B.J. Pawlak ,
W. Vandervorst ,
R. Lindsay ,
I. De Wolf ,
F. Roozeboom ,
R. Delhougne ,
A. Benedetti ,
R. Loo ,
M. Caymax  and
K. Maex
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B.J. Pawlak
Affiliation:
Philips Research Leuven, Kapeldreef 75, 3001 Leuven, Belgium, Tel.:+32.16281060, Fax.:+32.16.281214, email: [email protected]
W. Vandervorst
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
R. Lindsay
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
I. De Wolf
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
F. Roozeboom
Affiliation:
Philips Research Labs, WAG-p321, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands
R. Delhougne
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
A. Benedetti
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
R. Loo
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
M. Caymax
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
K. Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
N.E.B. Cowern
Affiliation:
Advanced Technology Institute, University of Surrey, Guildford, GU2 7XH, UK
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Extract

In advanced CMOS technology nodes one may achieve further enhancement of device performance by carrier mobility modification in the transistor channel. The carrier mobility enhancement can be realized by formation of strained silicon layers on a Si1−xGex strain relaxed buffer. Formation of source and drain extensions on such structures need to satisfy one additional requirement, the formation process, including the activation related thermal budget should not relax the strain in the channel. In this paper we separately investigate the role of amorphization during implantation, different doping impurities and thermal budget on the junction and the transistor channel regions properties. Two approaches of dopant activation are discussed: low temperature solid phase epitaxial regrowth and high temperature conventional spike.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 809: Symposium B – High-Mobility Group-IV Materials and Devices , 2004 , B9.6.1/C9.6
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

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