Hostname: page-component-669899f699-b58lm Total loading time: 0 Render date: 2025-04-27T12:24:02.012Z Has data issue: false hasContentIssue false
  • English
  • Français

A Robust LPCVD Nitride Integrated Process for High Density Non-Volatile Eprom Memories

Published online by Cambridge University Press:  21 February 2011

R. B. Sethi ,
R. P. Ciari ,
L. Anderson ,
U. S. Kim  and
A. Bergemont
R. B. Sethi
Affiliation:
National Semiconductor Corporation, Fairchild Research Center, Santa Clara, Ca 95052
R. P. Ciari
Affiliation:
National Semiconductor Corporation, Fairchild Research Center, Santa Clara, Ca 95052
L. Anderson
Affiliation:
National Semiconductor Corporation, Fairchild Research Center, Santa Clara, Ca 95052
U. S. Kim
Affiliation:
National Semiconductor Corporation, Fairchild Research Center, Santa Clara, Ca 95052
A. Bergemont
Affiliation:
National Semiconductor Corporation, Fairchild Research Center, Santa Clara, Ca 95052
Get access

Abstract

A robust 6" hotwall flatzone nitride system is developed for scaled ONO interpoly. dielectric application in a high density EPROM memory cell. This system is designed to operate at low temperature (660° C) and gas ratio (4:1 NH3: DCS) with integrated silicon carbide components. The obtained key features are low defects (0.25 #/cm2 particles), smooth topography (measured by atomic force microscopy) and superior electrical interface as measured by electrical and optical methods.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 303: Symposium G – Rapid Thermal and Integrated Processing II , 1993 , 383
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Yoshikawa, K. et al. , presented at the 1991 VLSI Technology Symposium.Google Scholar
2. Soennecken, A., Hilleringmann, U., Goser, K., Microelectronic Eng. 15(1991)Google Scholar
3. Kim, U. S. and Sethi, R. B., Extended Abstract of Electrochemical Society Meeting, Phoenix, AZ, Oct. 1991, Abstract No. 216.Google Scholar
4. Chesters, S.. Chang, H. & Kasper, G., Solid State Technology, January,1991Google Scholar
5. Murali, V., Wu, A.T., Chatterjee, A., and Fraser, D. B., presented at the 1990 Symposium on VLSI Technology.Google Scholar
6. Pan, C., Wu, K.J., Frieberger, P., Chatterjee, A., and Sery, G., IEEE Trans. on Electron Devices, Vol. 37, No. 6, 1990 Google Scholar