Hostname: page-component-586b7cd67f-t7czq Total loading time: 0 Render date: 2024-11-25T17:33:08.893Z Has data issue: false hasContentIssue false
  • English
  • Français

Reversible Ordering of a-Si1-xGex by the Combined Effect of Light and Temperature

Published online by Cambridge University Press:  21 March 2011

P. Martín ,
A. Torres ,
J. Jiménez ,
A. Rodríguez ,
J. Sangrador  and
T. Rodríguez
P. Martín
Affiliation:
Dpto. Física de la Materia Condensada, E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
A. Torres
Affiliation:
Dpto. Física de la Materia Condensada, E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
J. Jiménez
Affiliation:
Dpto. Física de la Materia Condensada, E.T.S.I.I., U. de Valladolid, Valladolid, Spain.
A. Rodríguez
Affiliation:
Dpto. Tecnología Electriónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain.
J. Sangrador
Affiliation:
Dpto. Tecnología Electriónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain.
T. Rodríguez
Affiliation:
Dpto. Tecnología Electriónica, E.T.S.I.T., Universidad Politécnica de Madrid, Madrid, Spain.
Get access

Abstract

Amorphous Si and a-Si1-xGex (0 ≤= x ≤= 0.38) films illuminated by above bandgap light, and heated between 110 and 180°C, undergoes an ordering transition, which is reversed to the amorphous phase by either heating up above 180°C or cooling down below 110°C. This structural change is investigated by Raman spectroscopy. The changes observed in the Raman spectra reveal the formation of small ordered clusters (only a few lattice parameters in diameter). The ordered state was not observed by the only effect of either light or temperature, suggesting that specific temperature and light excitation conditions are necessary to generate and support the ordered state, that appears as a nano-crystalline structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 808: Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004 , 2004 , A4.39
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Gueunier, M. E., Kleider, J. P., Chatterjee, P., Cabarrocas, P. Roca i, Poissant, Y.. Thin Solid Films 427, 247 (2003).Google Scholar
2. Tanaka, S., Kiyama, S.. Solar Energy Materials & Solar Cells 74, 339 (2002).Google Scholar
3. Lin, C.-S., Yeh, R.-H., Li, I.-X., Hong, J.-W.. Solid-State Electronics 47, 1787 (2003).Google Scholar
4. Toet, P., Smith, P. M., Sigmon, T. W., Takehara, T., Tsai, C. C., Hashberga, W. R., Thompson, M. O.. J. Appl. Phys. 85, 7914 (1999).Google Scholar
5. Solís, J., Siegel, J., Afonso, C. N., Jiménez, J., García, C.. J. Appl. Phys. 82, 236 (1997).Google Scholar
6. Staebler, D. L., Wronski, C. R.. Appl. Phys. Lett. 31, 292 (1977).Google Scholar
7. Stutzmann, M., Jackson, W. B., Tsai, C. C.. Phys. Rev. B 32, 23 (1985).Google Scholar
8. Abdulhalim, I., Beserman, R., Weil, R.. Phys. Rev. B 39, 1081 (1989), and references therein.Google Scholar
9. Rodríguez, A., Rodríguez, T., Olivares, J., Sangrador, J., Martín, P., Martínez, O., Jiménez, J., Ballesteros, C.. J. App. Phys. 90, 2544 (2001).Google Scholar
10. Richter, H., Wang, Z., Ley, L.. Solid St. Commun. 39, 625 (1981).Google Scholar
11. Campbell, I. H., Fauchet, P. M.. Solid St. Commun. 58, 738 (1986).Google Scholar
12. Jiménez, J., Wolf, I. De, Landesman, J. P.. Microprobe Characterization of Semiconductors, Ed. by Jiménez, J. (Taylor and Francis, New York 2002) Ch.2.Google Scholar
13. Klebinski, P., Pillpot, S. R., Wolf, D., Gleiter, H.. Phys. Rev. Lett. 77, 2965 (1996).Google Scholar
14. Yue, G.-Z., Lorentzen, J.-D., Lin, J., Hau, D.-X., Wang, Q.. Appl. Phys. Lett. 75, 492 (1999).Google Scholar
15. Kimerling, L.C.. Sol. St. Electron. 21, 1391 (1978).Google Scholar
16. Stutzman, M.. Appl. Phys. Lett. 47, 21 (1985).Google Scholar