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Retentivity of RRAM Devices Based on Metal / YBCO Interfaces

Published online by Cambridge University Press:  29 June 2011

A. Schulman  and
C. Acha
A. Schulman
Affiliation:
Departamento de Física – FCEyN – Universidad de Buenos Aires, Pabellón I, Ciudad Universitaria, C1428EHA Buenos Aires, Argentina
C. Acha
Affiliation:
Departamento de Física – FCEyN – Universidad de Buenos Aires, Pabellón I, Ciudad Universitaria, C1428EHA Buenos Aires, Argentina IFIBA – CONICET
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Abstract

The retention time of the resistive state is a key parameter that characterizes the possible utilization of the RRAM devices as a non – volatile memory device. The understanding of the mechanism of the time relaxation process of the information state may be essential to improve their performances. In this study we examine RRAM devices based on metal / YBCO interfaces in order to comprehend the physics beneath the resistive switching phenomenon.

Our experimental results show that after producing the switching of the resistance from a low to a high state, or vice versa, the resistance evolves to its previous state in a small but noticeable percentage. We have measured long relaxation effects on the resistance state of devices composed by metal (Au, Pt) / ceramic YBCO interfaces in the temperature range 77 K – 300 K. This time relaxation can be described by a stretched exponential law that is characterized by a power exponent n = 0.5, which is temperature independent, and by a relaxation time τ that increases with increasing the temperature. These characteristics point out to a non-thermally assisted diffusion process that could be associated with oxygen (or vacancy) migration and that produces the growth of a conducting (or insulating) fractal structure.

Keywords

memorydeviceselectromigration
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1337: Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories , 2011 , mrss11-1337-q10-07
Copyright
Copyright © Materials Research Society 2011

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References

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