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Reproducible Resistance Switching in Ni/NiO/Ni Trilayer

Published online by Cambridge University Press:  01 February 2011

Hisashi Shima ,
Fumiyoshi Takano ,
Hiro Akinaga ,
Isao H Inoue  and
Hidenori Takagi
Hisashi Shima
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan, +81-29-861-5912, +81-29-861-3211
Fumiyoshi Takano
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan
Hiro Akinaga
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, 305-8568, Japan
Isao H Inoue
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Correlated Electron Research Center, Tsukuba, 305-8562, Japan
Hidenori Takagi
Affiliation:
[email protected], National Institute of Advanced Industrial Science and Technology, Correlated Electron Research Center, Tsukuba, 305-8562, Japan
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Abstract

The resistance random access memory is attracting much attention as a high-density and high-speed non-volatile memory, having large resistance switching ration and good affinity with the conventional CMOS technologies. We demonstrate the resistance switching in the NiO thin film without using Pt electrode.

Keywords

oxidesputteringthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 997: Symposium I – Materials and Processes for Nonvolatile Memories II , 2007 , 0997-I07-08
Copyright
Copyright © Materials Research Society 2007

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