Hostname: page-component-6bf8c574d5-vmclg Total loading time: 0 Render date: 2025-02-20T14:52:24.933Z Has data issue: false hasContentIssue false
  • English
  • Français

Removal of SiO2 From Si (100) by Remote H2/SiH4 Plasma Prior to Epitaxial Growth

Published online by Cambridge University Press:  15 February 2011

J. P. Barnak ,
H. Ying ,
Y. L. Chen ,
J. Montgomery  and
R. J. Nemanich
J. P. Barnak
Affiliation:
Department of Materials Science and Engineering, Department of Electrical and Computer Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
H. Ying
Affiliation:
Department of Materials Science and Engineering, Department of Electrical and Computer Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
Y. L. Chen
Affiliation:
Department of Materials Science and Engineering, Department of Electrical and Computer Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
J. Montgomery
Affiliation:
Department of Materials Science and Engineering, Department of Electrical and Computer Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
R. J. Nemanich
Affiliation:
Department of Materials Science and Engineering, Department of Electrical and Computer Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
Get access

Abstract

This study demonstrates the cleaning of Si(100) surfaces with a remote H2/SiH4 plasma. The surfaces were prepared with a chemical oxide the remains after an RCA clean. The plasma cleaning process was designed to remove contaminants such as C, F, and SiO2. The key to successful removal of the oxide is to have the plasma chemistry in a neutral deposition regime. The neutral deposition process regime is a balance between the deposition of Si by SiH4 and the etching of the deposited Si by atomic H. During the neutral deposition mode the SiO2 was removed without deposition of Si on the SiO2 surface. Once the SiO2 layer is removed, theunderlying Si surface is exposed to the H2/SiH4 plasma and a thin epitaxial film may be deposited. The final Si surface configuration after plasma cleaning is a 2×1 hydrogen terminated surface. The characterization of the interface and epitaxial film were investigated using Auger electron spectroscopy (AES) and transmission electron microscopy (TEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 351
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tatsuya Yamaraki, Miyata, N., Aoyama, T., and Ito, T., J. Electrochem. Soc., Vol.139, No.4, April 1175–1180 (1992)Google Scholar
2. Hsieh, T.Y., Jung, K.H., Kwong, D.L., Koschmieder, T.H., and Thompson, J.C., J. Electrochem. Soc., Vol.139, No.7, July 1971–1978 (1992)Google Scholar
3. Aoyama, T., Yamazaki, T., and Ito, T., J. Electrochem. Soc., Vol.140, No.2, February 366–371 (1993)Google Scholar
4. Chang, R.P.H., Chang, C.C.C., and Darack, S., J.Vac. Sci. Technol., Vol.20, No.1 January 45–50 (1982).Google Scholar
5. Izumi, A., Matsuka, T., Takeuchi, T., and Yamano, A., in Cleaning Technology in Semiconductor Device Manufacturing, Ruzyllo, J. and Novak, R., Eds., The Electrochem. Soc., Inc. Princeton, NJ, Vol.12: 260–276 (1992).(Vapor Phase Cleaning)Google Scholar
6. Hsu, T., Anthony, B., Qian, R., Irby, J., Kinosky, D., Mahajan, A., Banerjee, S., Magee, C., and Tasch, A., Journal of Electronic Materials, Vol.21, No. 1, 1992, 65–74.Google Scholar
7. Cho, Jaewon, Schneider, T. P., VanderWeide, J., Jeon, Hyeongtag, and Nemanich, R. J.; Appl. Phys. Lett. 59: 1995–97, (1991)Google Scholar
8. Barnak, J.P., King, S., Montgomery, J., Ku, Ja-Hum, and Nemanich, R.J., to appear in Removal of Fluorine From a Si (100) Surface by a Remote RF Hydrogen Plasma. edited by Liehr, M., Heyns, M., Hirose, M., and Parks, H. (Mater. Res. Soc. Symp. Proc., Pittsburgh, PA, Spring 1995 in Symposium O: Ultraclean Semiconductor Processing Technology and Surface Chemical Cleaning and Passivation).Google Scholar
9. Tsukune, A., Nakazawa, T., Mieno, F., Furumura, Y., and Wada, K., Abstracts, Vol.89–2, Hollywood, FL, Oct. 15–20, (1989).Google Scholar
10. Schneider, T. P., Aldrich, D. A., Cho, Jaewon, and Nernanich, R. J., in Mat. Res. Soc. Symp. Proc., Spring 1991 in Symposium B: Silicon Molecular Beam Epitaxy.Google Scholar
11. Hattangady, S.V., Posthill, J.B., Fountain, G.G., Rudder, R.A., Mantini, M.J., and Markunas, R.J., Appl. Phys. Lett. 59 (3), 15 July 339–341 (1991).Google Scholar
12. Johnson, N.M., Walker, J., and Stevens, K.S., J. Appl. Phys. 69 (4), 15 February 2631–34 (1991).Google Scholar