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Removal of Fluorine From a Si (100) Surface by a Remote RF Hydrogen Plasma

Published online by Cambridge University Press:  15 February 2011

J. P. Barnak ,
S. King ,
J. Montgomery ,
Ja-Hum Ku  and
R. J. Nemanich
J. P. Barnak
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
S. King
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
J. Montgomery
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
Ja-Hum Ku
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
R. J. Nemanich
Affiliation:
Department of Materials Science and Engineering, and Department of Physics North Carolina State University, Raleigh, NC 27695-8202
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Abstract

Fluorine contamination was removed from a Si(100) surface by an atomic H flux. The surface was intentionally contaminated to approximate the residual fluorine concentration remaining after a concentrated HF last process. By dipping the wafers in concentrated HF the thin oxide was removed and replaced with a hydrogen and fluorine terminated surface. This surface was then either vacuum annealed or exposed to a 20 Watt rf excited H-plasma at 50 mTorr, in order to achieve an atomically clean surface. The substrate temperature during the Hplasma exposure and vacuum anneal was 450°C. The surface chemistry was characterized with x-ray photoemission spectroscopy (XPS), auger electron spectroscopy (AES), and angle-resolved UV photoemission spectroscopy (ARUPS). The surface symmetry was characterized with low energy electron diffraction (LEED). Before the H-plasma exposure, the XPS spectra indicated Si-F bonding, and a l×1 LEED diffraction pattern was observed. Immediately following the Hplasma exposure, the fluorine concentration was reduced below detection limits of XPS, and the surface showed a 2×1 reconstruction. A mechanism is proposed by which molecular HF results from atomic hydrogen interactions with fluorine on the surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 357
Copyright
Copyright © Materials Research Society 1995

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References

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