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Reliable Metallization and Wet Etch Process for Waveguide Formation on InP/InGaAs Mqw Modulator Structures

Published online by Cambridge University Press:  25 February 2011

Carsten Thirstrup  and
Thomas Clausen
Carsten Thirstrup
Affiliation:
Technical University of Denmark, Mikroelektronik Centret, Building 345 East, DK-2800 Lyngby, Denmark
Thomas Clausen
Affiliation:
Technical University of Denmark, Physics Department, Building 309, DK-2800 Lyngby, Denmark
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Abstract

A simple process for making reliable InP/InGaAs multiple quantum well (MQW) modulator waveguide devices optimized with respect to electro-refractive modulation has been developed. The main concern of this study is the surface properties of the InP surface prior to metallization and etching. A new protective surface passivation technique combining vacuum procurement (∼5xl0-7 Torr) to reduce the water content in the native oxides with an in situ rf-sputter deposition of reactive SiOx onto the surface of InP is reported. This procedure provides smooth surfaces and good optical properties of GaInAs/InP based strip-loaded waveguides.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 645
Copyright
Copyright © Materials Research Society 1994

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References

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