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Reduction of Whisker-Originated Short between W Polymetal and Contact Plug

Published online by Cambridge University Press:  21 March 2011

Yasushi Akasaka ,
Hiroshi Suzuki ,
Yuji Yokoyama ,
Nobuaki Yasutake ,
Hitomi Yasutake ,
Susumu Yoshikawa ,
Yusuke Kohyama ,
Yoshio Ozawa ,
Katsuhiko Hieda  and
Kyoichi Suguro
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Yasushi Akasaka
Affiliation:
Fujitsu Laboratories Ltd., Shinsugita-cho 8, Isogo-ku, Yokohama 235-8522, Japan
Hiroshi Suzuki
Affiliation:
Fujitsu Limited, Shinsugita-cho 8, Isogo-ku, Yokohama 235-8522, Japan
Yuji Yokoyama
Affiliation:
Fujitsu/ Toshiba/ Winbond DRAM development project Semiconductor Company, Toshiba Corporation, Shinsugita-cho 8, Isogo-ku, Yokohama 235- 8522, Japan
Nobuaki Yasutake
Affiliation:
Fujitsu/ Toshiba/ Winbond DRAM development project Semiconductor Company, Toshiba Corporation, Shinsugita-cho 8, Isogo-ku, Yokohama 235- 8522, Japan
Hitomi Yasutake
Affiliation:
Fujitsu/ Toshiba/ Winbond DRAM development project Semiconductor Company, Toshiba Corporation, Shinsugita-cho 8, Isogo-ku, Yokohama 235- 8522, Japan
Susumu Yoshikawa
Affiliation:
Fujitsu/ Toshiba/ Winbond DRAM development project Semiconductor Company, Toshiba Corporation, Shinsugita-cho 8, Isogo-ku, Yokohama 235- 8522, Japan
Yusuke Kohyama
Affiliation:
Fujitsu/ Toshiba/ Winbond DRAM development project Semiconductor Company, Toshiba Corporation, Shinsugita-cho 8, Isogo-ku, Yokohama 235- 8522, Japan
Yoshio Ozawa
Affiliation:
Fujitsu/ Toshiba/ Winbond DRAM development project Semiconductor Company, Toshiba Corporation, Shinsugita-cho 8, Isogo-ku, Yokohama 235- 8522, Japan
Katsuhiko Hieda
Affiliation:
Fujitsu/ Toshiba/ Winbond DRAM development project Semiconductor Company, Toshiba Corporation, Shinsugita-cho 8, Isogo-ku, Yokohama 235- 8522, Japan
Kyoichi Suguro
Affiliation:
Fujitsu/ Toshiba/ Winbond DRAM development project Semiconductor Company, Toshiba Corporation, Shinsugita-cho 8, Isogo-ku, Yokohama 235- 8522, Japan
Toshihiro Nakanishi
Affiliation:
Fujitsu Laboratories Ltd., Shinsugita-cho 8, Isogo-ku, Yokohama 235-8522, Japan
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Abstract

Whisker-originated short in the self-aligned contact (SAC) W polymetal gate was directly observed for the first time. Short points between gate electrodes and poly-Si plugs in the test structure were identified by emission microscope and cross-sectional TEM samples of those points were made by using focused ion beam (FIB).

Whiskers are formed during high-temperature processing such as LP-CVD SiN. We have proposed that NH3 de-oxidation step inserted in the SiN deposition sequence is effective for suppressing whisker growth. [1] In this study it was also confirmed that 600°C NH 3 pre-flow improved leakage current between gate electrode and contact plugs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 670: Symposium K – Gate Stack and Sillicide Issues in Silicon , 2001 , K5.6
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Akasaka, Y. et al., Jpn. J. Appl. Phys. 38, 2385 Google Scholar
2. Akasaka, Y. et al., IEEE Trans. Electron Devices, ED–43, 1864 (1996).Google Scholar
3. Akasaka, Y. et al., Mat. Res. Soc. Symp. Proc. VLSI10, p521(2000).Google Scholar