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Reduction of Triangular Defects on 100mm 4° off-axis 4H-SiC using a Chloride Based CVD process

Published online by Cambridge University Press:  29 May 2012

Hrishikesh Das ,
Swapna Sunkari ,
Timothy Oldham ,
Josh Rodgers  and
Janna Casady
Hrishikesh Das*
Affiliation:
SemiSouth Laboratories, Inc. 201 Research Blvd., Starkville, MS, 39759, USA
Swapna Sunkari
Affiliation:
SemiSouth Laboratories, Inc. 201 Research Blvd., Starkville, MS, 39759, USA
Timothy Oldham
Affiliation:
SemiSouth Laboratories, Inc. 201 Research Blvd., Starkville, MS, 39759, USA
Josh Rodgers
Affiliation:
SemiSouth Laboratories, Inc. 201 Research Blvd., Starkville, MS, 39759, USA
Janna Casady
Affiliation:
SemiSouth Laboratories, Inc. 201 Research Blvd., Starkville, MS, 39759, USA
*
a[email protected],
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Abstract

Homoepitaxial layers were grown with very low surface roughness on 4", 4˚ off-axis substrates, but a new kind of large obtuse angled triangular defect that spanned 1000-2000 μm was observed. Process changes resulted in reduction of the size and concentration of these triangular defects from 3.5cm-2 to 0.13cm-2. Both large and small triangular defects were found to have a similar core structure. No degradation in the epitaxial morphology or quality was seen due to the process change. JBS diodes fabricated on wafers with large triangular defects had much higher leakage when the triangular defects were present in the active area of the diodes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1433: Symposium H – Silicon Carbide 2012—Materials, Processing and Devices , 2012 , mrss12-1433-h04-17
Copyright
Copyright © Materials Research Society 2012

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References

REFERENCES

1. Ueda, T., Nishino, H., and Matsunami, H., J. Crys. Growth, Vol. 104, pp. 695 (1990)Google Scholar
2. Kimoto, T., and Matsunami, H., J. Appl. Phys., Vol. 75, pp. 850 (1994)Google Scholar
3. Powell, J.A, Petit, J.B., Edgar, J.H., Jenkins, I.G., Matus, L.G., Yang, J.W., Pirouz, P., Choyke, W.J., Clemen, L., and Yoganathan, M., Appl. Phys. Lett., Vol. 59, pp. 333 (1991)Google Scholar
4. Konstantinov, A.O., Hallin, C., Kordina, O., and Janzén, E., J. Appl. Phys., Vol. 80, pp. 5704 (1996)Google Scholar
5. Das, H., Melnychuk, G. and Koshka, Y., J. Crys. Growth, Vol. 312, pp. 1912–1919, 2010 Google Scholar
6. Shrivastava, A., Muzykov, P., Caldwell, J.D., and Sudarshan, T.S., J. Crys. Growth, Vol. 310, pp. 4443–4450 (2008)Google Scholar
7. Chung, G., Loboda, M.J., Zhang, J., Wan, J.W., Carlson, E.P., Toth, T.J., Stahlbush, R.E., Skowronski, M., Berechman, R., Sundaresan, S.G., and Singh, Ranbir, Mater. Sci. Forum Vols. 679–680, pp. 123–126 (2011)Google Scholar
8. Das, H., Sunkari, S., Oldham, T., Casady, J., and Casady, Jeff, presented at the 2011 ICSCRM, Invited Poster-3, Cleveland, OH, 2011 (to be published in Mater. Sci. Forum)Google Scholar