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Reduction of The Phase Transition Temperature of TiSi2 on Si(111) Using a Ta Interlayer

Published online by Cambridge University Press:  10 February 2011

Bokhee Jung ,
Young Do Kim ,
Woochul Yang ,
R. J. Nemanich  and
Hyeongtag Jeon
Bokhee Jung
Affiliation:
Division of Materials Science and Engineering, CPRC, Hanyang Univ., Seoul, 133–791, Korea
Young Do Kim
Affiliation:
Division of Materials Science and Engineering, CPRC, Hanyang Univ., Seoul, 133–791, Korea
Woochul Yang
Affiliation:
Dept. of Physics, North Carolina State Univ., Raleigh, NC, 27695, USA
R. J. Nemanich
Affiliation:
Dept. of Physics, North Carolina State Univ., Raleigh, NC, 27695, USA
Hyeongtag Jeon
Affiliation:
Division of Materials Science and Engineering, CPRC, Hanyang Univ., Seoul, 133–791, Korea
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Abstract

The effect of a thin Ta interlayer on the C49 to C54 phase transition of TiSi2 on Si(111) was examined. The Ta interlayered samples were prepared by depositing Ta and Ti films sequentially on Si(111) substrates in a UHV system. As control samples, 100Å Ti films were deposited directly on clean Si(111) substrates. The deposited substrates were annealed for 10 min, in-situ, at temperatures between 500°C and 750°C using 50°C increments. The TiSi2, which formed in this UHV process, was analyzed with XRD, AES, SEM, TEM, and four-point probe measurements. The control samples exhibited the C49 to C54 transition at a temperature of 750°C. However, the TiSi2 samples with 5Å and 10Å Ta interlayers displayed a significant reduction of the phase transition temperature. The XRD analysis indicated that the C49 to C54 transition temperature of TiSi2 was lowered by ∼200°C. The sheet resistance measurement showed a low resistivity characteristic of C54. The SEM and TEM micrographs showed that the Ta interlayer also suppressed the surface agglomeration of the C54 TiSi2 film. The AES analysis data indicated that the composition of the titanium silicide showed the expected Ti:Si stoichiometry of 1:2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 59
Copyright
Copyright © Materials Research Society 1999

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References

[1] Miles, G. L., Mann, R. W., Bertsch, J. E., Thin Solid Films. 290, 469 (1996)Google Scholar
[2] Saenger, K. L., Carbral, C. Jr., Clevenger, L.A., Roy, R. A., and , Wind, J. Appl. Phys. 78, 7040 (1995)10.1063/1.360407Google Scholar
[3] Lee, S., Lee, H., Jeon, H., Jpn. J. Appl. Phys. 36, 7317 (1997)10.1143/JJAP.36.7317Google Scholar
[4] Jeon, H., Sukow, C. A., Honeycutt, J. W., Rozgonyi, G. A., and Nemanich, R. J., J. Appl. Phys. 71. 4269, (1992)10.1063/1.350808Google Scholar
[5] Beyer, R., Coulman, D., and Merchant, P., J. Appl. Phys. 61 5110 (1987)10.1063/1.338337Google Scholar
[6] Li, X.-H., Carlsson, J. R. A., Gong, S. F., and Hentzell, H. T. G., J. Appl. Phys. 72, 514 (1992)Google Scholar
[7] Shukla, R. K., Multani, J. S., IEEE Multilevel Interconnection Conf. 470 (1987)Google Scholar
[8] Ting, C. Y., d'Heurle, F. M., lyer, S. S., and Fryer, P. M., J. Electrochem. Soc. 133, 2621 (1986)Google Scholar
[9] Kuwano, H., Phillips, J. R., and Mayer, J. W., Appl. Phys. Lett. 56, 440 (1990)Google Scholar
[10] C.-C Chen, Wang, Q. F., Jonckx, F., Jenq, J.-S. and Maex, K., Mat. Res. Symp. Proc. 402, 89 (1996)Google Scholar
[11] Mann, R. W., Miles, G. L., Knotts, T. A., Rakowski, D. W., Clevenger, L. A., Harper, J. M. E.. d'Heurle, F. M., and Cabral, C., Jr., Appl. Phys. Lett. 67, 3729 (1995)10.1063/1.115364Google Scholar
[12] Mouroux, A., Zhang, S.-L., and Peterson, C. S., Physical Review B. 56, 10614 (1997)Google Scholar
[13] Jeon, H., Yoon, G., Nemanich, R. J., Thin Solid Films. 299, 178 (1997)Google Scholar
[14] Dahan, R., Pelleg, J., and Zevin, L., J. Appl. Phys. 67, 2885 (1990)Google Scholar