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Recrystallization of Amorphous Silicon Using Rapid Thermal Processing, Laser Annealing and Furnace Heating

Published online by Cambridge University Press:  22 February 2011

J. Viatella ,
R.K. Singi ,
R.P.S. Thiakur ,
G. Sandhu  and
S.D. Harkness
J. Viatella
Affiliation:
Department of Material Science and Engineering, University of Florida, Gainesville 32611 Micron Semiconductor Inc., 2805 East Columbia Road, Boise, ID 83706
R.K. Singi
Affiliation:
Department of Material Science and Engineering, University of Florida, Gainesville 32611 Micron Semiconductor Inc., 2805 East Columbia Road, Boise, ID 83706
R.P.S. Thiakur
Affiliation:
Department of Material Science and Engineering, University of Florida, Gainesville 32611 Micron Semiconductor Inc., 2805 East Columbia Road, Boise, ID 83706
G. Sandhu
Affiliation:
Department of Material Science and Engineering, University of Florida, Gainesville 32611 Micron Semiconductor Inc., 2805 East Columbia Road, Boise, ID 83706
S.D. Harkness
Affiliation:
Department of Material Science and Engineering, University of Florida, Gainesville 32611 Micron Semiconductor Inc., 2805 East Columbia Road, Boise, ID 83706
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Abstract

Recrystallization of amorphous silicon has been investigated using conventional furnace annealing, incoherent light-based rapid thermal annealing (RTA) and pulsed laser annealing using excimner laser (wavelength=248 nm, energy density = 0.1−0.6 J/cm2) at a pulse width of approximately 20 nanoseconds. The effects of annealing methods are characterized for grain growth and crystallized orientation using transmission electron microscopy (TEM) and X-ray diffraction analysis. The various recrystallization methods are compared based on the structural properties of the resulting film and optimized thermal budgets for each heating mechanism are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 342: Symposium G – Rapid Thermal and Integrated Processing III , 1994 , 297
Copyright
Copyright © Materials Research Society 1994

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References

REFERENCES

1. King, T. J., Hack, M. G., Wu, I. W., Journal of Applied Physics 75, 908–913 (1994).Google Scholar
2. Faughnan, B., Ipri, A. C., IEEE Transactions on Electronic Devices 36, 101–106 (January 1989).Google Scholar
3. Bachrach, R. Z., Winer, K., Boyce, J. B., Ready, S. E., Johnson, R. I., Anderson, G. B., Journal of Electronic Materials 19, 241–248 (1990).Google Scholar
4. Singh, R., Journal of Applied Physics 63, R59 (1988).Google Scholar
5. Brotherton, S. D., McCulloch, D. J., Clegg, J. B., Gowers, J. P., IEEE Transactions on Electronic Devices 40, 407–413 (February 1993)Google Scholar
6. Bachrach, R. Z., Winer, K., Boyce, J. B., Ponce, F. A., Ready, S. E., Johnson, R., Anderson, G. B., Materials Research Society Symposium Proceedings 157, 467–472 (1990)Google Scholar
7. Sagara, K., Murakami, E., Applied Physics Letters 54, 2003–2005 (1989).Google Scholar
8. Viatella, J., Singh, R.K., Thakur, R.P.S., MRS Symposia, to be published, Spring Conference (1994).Google Scholar
9. Stiffler, S. R., Thompson, M. O., Physical Review B 43, 9851–9855 (April 1991).Google Scholar