Hostname: page-component-586b7cd67f-vdxz6 Total loading time: 0 Render date: 2024-11-25T16:25:59.211Z Has data issue: false hasContentIssue false
  • English
  • Français

Reaction Processes for Low Temperature (<150°C) Plasma Enhanced Deposition of Hydrogenated Amorphous Silicon Thin-Film Transistors on Transparent Plastic Substrates

Published online by Cambridge University Press:  10 February 2011

Gregory N. Parsons ,
Chien-Sheng Yang ,
Tonya M. Klein  and
Laura Smith
Gregory N. Parsons
Affiliation:
Department of Chemical Engineering North Carolina State University, Raleigh, NC 27695-7905
Chien-Sheng Yang
Affiliation:
Department of Chemical Engineering North Carolina State University, Raleigh, NC 27695-7905
Tonya M. Klein
Affiliation:
Department of Chemical Engineering North Carolina State University, Raleigh, NC 27695-7905
Laura Smith
Affiliation:
Department of Chemical Engineering North Carolina State University, Raleigh, NC 27695-7905
Get access

Abstract

This article presents mechanisms for low temperature (<150°C) rf plasma enhanced chemical vapor deposition of silicon and silicon nitride thin films that lead to sufficient electronic quality for thin film transistor (TFT) fabrication and operation. For silicon deposition, hydrogen abstraction and etching, and silicon disproportionation reactions are identified that can lead to optimized hydrogen concentration and bonding environments at <150°C. Nitrogen dilution of SiH4/NH3 mixtures during silicon nitride deposition at low temperatures helps promote N-H bonding, leading to reduced charge trapping. Good quality amorphous silicon TFT's fabricated with a maximum processing temperature of 110 °C are demonstrated on flexible transparent plastic substrates. Transistors formed with the same process on glass and plastic show linear mobilities of 0.33 and 0.12 cm2/Vs, respectively, with ION/IOFF ratios > 106.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 19
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] McCormick, C. S., Weber, C. E., Abelson, J. R., and Gates, S.M., Appl. Phys. Lett. 70, 226–227 (1997).Google Scholar
[2] Smith, P. M., Carey, P. G., and Sigmon, T. W., Appl. Phys. Lett. 70, 342–343 (1997).Google Scholar
[3] Stein, A., Liss, A., Fields, S., Digest of 1997 Society Information Display International Symposium Digest of Technical Papers Volume XXVIIL p. 817.Google Scholar
[4] Gates, S.M., Materials Research Society Symposium Proceedings Vol. 471, Spring 1997.Google Scholar
[5] Young, N.D., Harkin, G., Bunn, R.M., McCulloch, D.J., Wilks, R.W., Knapp, A.G., IEEE Electron Device Letters 18, 19–20 (1997).Google Scholar
[6] Burns, S.J., Shanks, H.R., Constant, A.P., Gruber, C., Schmidt, D., Landin, A., and Olympie, F., Electrochemical Society Proceedings Volume 96–23, p.382 (1996).Google Scholar
[7] Okamoto, S., Hishikawa, Y. and Tsuda, S., Japanese J. Appl. Phys. 35, 26–33 (1996).Google Scholar
[8] Wieder, S., Rech, B., Beneking, C., Siebke, F., Reetz, W., and Wagner, H., 13th European Photovoltaic Solar Energy Conference, 1995.Google Scholar
[9] Hishikawa, Yoshihiro, Tsuge, Sadaji, Nakamura, Noboru, Tsuda, Shinya, Nakano, Shoichi, and Kuwano, Yukinori, J. Appl. Phys. 69, 508–510 (1991).Google Scholar
[10] Feng, M.S., Liang, C.W., and Tseng, D., J. Electrochem. Soc. 141, 1040–1045 (1994).Google Scholar
[11] Srinivasan, E., Lloyd, D.A., and Parsons, G.N., J.Vac.Sci. Technolb. A 15, 77 (1997).Google Scholar
[12] Srinivasan, E., and Parsons, G.N., Appl. Phys. Lett. 72, 456–458 (1998).Google Scholar
[12] Muramatsu, Y. and Yabumoto, N., Appl. Phys. Lett. 49, 1231 (1988).Google Scholar
[14] Yang, C.S. and Parsons, G.N., unpublished.Google Scholar