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Rapid Thermal Processing: How Well is it Doing and Where is it Going?

Published online by Cambridge University Press:  28 February 2011

T.O. Sedgwick*
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
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Abstract

The use of Rapid Thermal Processing (RTP) as a processing tool in semiconductor technology is still increasing and and becoming more diverse. The use of RTP in a reactive mode for film growth and deposition is an important new direction. The strong interest in III-V compound annealing studies represents one of the most important application areas. Although RTP is predominantly exploratory and developmental in nature it is slowly being introduced into the manufacture of Si devices. The technological necessity for the greater use of RTP in routine production will depend on either demonstrated productivity/cost advantages or on some intrinsic advantage of RTP. The intrinsic advantages of RTP are due to the single wafer processing nature of the operation or due to the possibility of selectively enhancing one desired process over another undesired reaction in a partically fabricated structure. Although significant impovements in commercially available reactors have been made in the last several years, better temperature measurement and control and particularly temperature uniformity of the wafer are still sorely needed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. See several papers in Mat. Res. Soc. Symp. Proc. 52, (1986)Google Scholar
2. See several papers in Mat. Res. Soc. Symp. Proc. 71, (1986)Google Scholar
3. See several papers in Mat. Res. Soc. Symp. Proc. 35, (1985)Google Scholar
4. Sheets, R.E., Mat. Res. Soc. Symp. Proc. 52, 191 (1986)Google Scholar
5. Gelpey, J.C., Stump, P.O. and Smith, J.W., Mat. Res. Soc. Symp. Proc. 52, 199 (1986)Google Scholar
6. Cohen, S.A., Sedgwick, T.O. and Speidell, J.L., Mat. Res. Soc. Symp. Proc. 23, 321 (1984)Google Scholar
7. Sedgwick, T.O., J. Electrochem. Soc., 130, 484 (1983)Google Scholar
8. Sedgwick, T.O., Proceedings of the Symposium of Reduced Temperature Processing for VLSI, Eds. Strinivasan, G.R. and Reif, R., 86-5, (The Electrochemical Society, Princeton, NJ, 1986), p.49 Google Scholar
9. Seidel, T.E., Lischner, D.J., Pai, C.S., Knoell, R.V., Maher, D.M. and Jacobson, D.C., Nuclear Instruments and Methods in Physics Research. B7/8, (North-Holland Amsterdam, 1985) p. 251 Google Scholar
10. Mercier, J.S., Technical Proceedings Semicon/East 1986, Sept. 16-18, 1986, Boston, MA, p.22Google Scholar
11. Ryssel, H., Muller, K., Haberger, K., Henkelmann, R. and Jahnel, F., Appl. Phys. 22, 35 (1980)Google Scholar
12. Michel, A.E., Mat. Res. Soc. Symp. Proc., 52, 3 (1986)Google Scholar
13. Sedgwick, T.O., d'Heurle, F.M. and Cohen, S.A., J. Electrochem. Soc., 131, 2446 (1984)Google Scholar
14. Gronet, C.M., Sturm, J.C., Williams, K.E. and Gibbons, J.F., Mat. Res. Soc. Symp. Proc. 52, 305 (1986)Google Scholar
15. Gronet, C.M., King, C.A., Opyd, W., Gibbons, J.M., Wilson, S.D. and Hull, R. (to be published)Google Scholar
16. d'Heurle, F., Mat. Res. Soc. Sym. Proc. 52, 262 (1986)Google Scholar
17. Tatsuta, S., Inata, T., Okamura, S. and Hiyamizu, S., Jap. J. Appl. Phys. 23, L147 (1984)Google Scholar
18. Gardner, P.D.. Liu, S.G., Narayan, S.Y., Colvin, S.D., Paczkowski, J.P. and Capewell, D.R., IEEE Electron Device Lett., EDL-7, 363 (1986)Google Scholar
19. Cibert, J., Petroff, P.M., Dolan, G.J., Pearton, S.J., Gossard, A.C. and English, J.H., Appl. Phys. Lett. 49, 1275 (1986)Google Scholar
20. Sturm, J.C., Gronet, C.M. and Gibbons, J.F., IEEE Electron Device Lett. EDL-7, 282 (1986)Google Scholar
21. McMahon, R.A., Hasko, D.G. and Ahmed, H., Rev. Sci. Instrum. 56, 1257 (1985)Google Scholar
22. Meek, T.T., Blake, R.D. and Petrovic, J.J. (to be published)Google Scholar