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Rapid Thermal Annealing and Oxidation of Silicon Wafers with Back-Side Films

Published online by Cambridge University Press:  10 February 2011

A. T. Fiory
A. T. Fiory*
Affiliation:
Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill NJ 07974
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Abstract

Temperatures for lamp-heated rapid thermal processing of wafers with various back-side films were controlled by a Lucent Technologies pyrometer which uses a/c lamp ripple to compensate for emissivity. Process temperatures for anneals of arsenic and boron implants were inferred from post-anneal sheet resistance, and for rapid thermal oxidation, from oxide thickness. Results imply temperature control accuracy of 12°C to 17°C at 3 standard deviations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 470: Symposium F – Rapid Thermal and Integrated Processing IV , 1997 , 49
Copyright
Copyright © Materials Research Society 1997

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References

REFERENCES

1. Nguyenphu, B., Oh, M., and Fiory, A. T., Mat. Res. Soc. Proc. 429, 291 (1996).Google Scholar
2. Schietinger, C., Adams, B., and Yarling, C., Mat. Res. Soc. Proc. 224, 23 (1991).Google Scholar
3. Abedrabbo, S. and Ravindra, N.M., private communication.Google Scholar
4. Knutson, K. L. and Cooper, T. L., Mat. Res. Soc. Proc. 429, 31 (1996), and private communication.Google Scholar