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Raman Spectroscopy of Ferroelectric Thin Films

Published online by Cambridge University Press:  11 February 2011

R. S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
A. Dixit
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
M. Jain
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
A. A. Savvinov
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
P. S. Dobal
Affiliation:
Department of Physics, University of Puerto Rico, San Juan, PR-00931–3343
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Abstract

During a ferroelectric phase transition or domain rearrangement, ions or molecules in a ferroelectric material move in a highly cooperative manner from their initial lattice positions into the final positions they occupy and the collective response results into a “soft” lattice vibrational mode. Moreover, the structural changes are always accompanied by at least a few other changes in the normal mode behavior of the material. In the present work, Raman spectroscopy is conveniently employed to study such vibrational modes and other related phenomena in ferroelectric materials at the sub-microscale levels. We have investigated ferroelectric thin films of various lead and barium based perovskites prepared by sol-gel technique. The effect of processing conditions, A- and B- site substitutions, and size dependence on their Raman spectra were analyzed in terms of the structure-property correlations.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

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References

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