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Raman and Photoluminescence Studies of Undoped and Magnesium-Doped Gan Films on Sapphire

Published online by Cambridge University Press:  21 February 2011

Jaime A. Freitas Jr  and
M. Asif Khan
Jaime A. Freitas Jr
Affiliation:
Sachs/Freeman Assoc. Inc., 1401 McCormick Dr., Landover, MD20785, Naval Research Laboratory: Contract #N00014–93-C-2227
M. Asif Khan
Affiliation:
APA Optics Inc., 2950 N.E. 84th Lane, Blaine, MN, 55434
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Abstract

Room temperature Raman scattering measurements performed on undoped GaN films indicate that high crystalline quality wurtzite material has been deposited on the basal plane of sapphire. Photoluminescence study of these films show that thicker films (t > 4μm) are homogeneous along the growth direction. The PL spectra of Mg-doped films are dominated by an intense emission band around 3.1 eV associated with recombination processes involving donor-acceptor pairs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 339: Symposium D – Diamond, Silicon Carbide and Nitride Wide Bandgap Semiconductors , 1994 , 547
Copyright
Copyright © Materials Research Society 1994

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References

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